Asymmetric properties of Pb(Zr,Ti)O3 thin film capacitors with conducting oxides

C. H. Choi; J. Lee

doi:10.1051/jp4:1998918

Asymmetric properties of Pb(Zr,Ti)O₃ thin film capacitors with conducting oxides

C. H. Choi, J. Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Asymmetric properties of Pb(Zr,Ti)O₃ (PZT) thin films has been studied in (La,Sr)CoO₃/Pb(Zr,Ti)O₃/(La,Sr)CoO₃ (LSCO) heterostructures in which the conducting oxide (La,Sr)CoO₃ (LSCO) and/or LaCoO₃ (LCO) have been used as an electrode. LCO/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxai ion of the remanent polarization at the negatively poled state, eventually leading to an imprint failure. Corresponding to P-V hysteresis loop, leakage current behavior and capacitance - voltage characteristic of the LCO/PZT/LSCO were asymmetric. Post annealing treatment at reducing atmosphere further increased the relaxation of the unstable remanenet polarization.

Original language	English
Pages (from-to)	Pr9-109-Pr9-112
Journal	Journal De Physique. IV : JP
Volume	8
Issue number	9
DOIs	https://doi.org/10.1051/jp4:1998918
State	Published - Dec 1998

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@article{c7df57483e5043af9ad1bdf7deb44500,

title = "Asymmetric properties of Pb(Zr,Ti)O3 thin film capacitors with conducting oxides",

abstract = "Asymmetric properties of Pb(Zr,Ti)O3 (PZT) thin films has been studied in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures in which the conducting oxide (La,Sr)CoO3 (LSCO) and/or LaCoO3 (LCO) have been used as an electrode. LCO/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxai ion of the remanent polarization at the negatively poled state, eventually leading to an imprint failure. Corresponding to P-V hysteresis loop, leakage current behavior and capacitance - voltage characteristic of the LCO/PZT/LSCO were asymmetric. Post annealing treatment at reducing atmosphere further increased the relaxation of the unstable remanenet polarization.",

author = "Choi, \{C. H.\} and J. Lee",

year = "1998",

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doi = "10.1051/jp4:1998918",

language = "English",

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journal = "Journal De Physique. IV : JP",

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TY - JOUR

T1 - Asymmetric properties of Pb(Zr,Ti)O3 thin film capacitors with conducting oxides

AU - Choi, C. H.

AU - Lee, J.

PY - 1998/12

Y1 - 1998/12

N2 - Asymmetric properties of Pb(Zr,Ti)O3 (PZT) thin films has been studied in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures in which the conducting oxide (La,Sr)CoO3 (LSCO) and/or LaCoO3 (LCO) have been used as an electrode. LCO/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxai ion of the remanent polarization at the negatively poled state, eventually leading to an imprint failure. Corresponding to P-V hysteresis loop, leakage current behavior and capacitance - voltage characteristic of the LCO/PZT/LSCO were asymmetric. Post annealing treatment at reducing atmosphere further increased the relaxation of the unstable remanenet polarization.

AB - Asymmetric properties of Pb(Zr,Ti)O3 (PZT) thin films has been studied in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures in which the conducting oxide (La,Sr)CoO3 (LSCO) and/or LaCoO3 (LCO) have been used as an electrode. LCO/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxai ion of the remanent polarization at the negatively poled state, eventually leading to an imprint failure. Corresponding to P-V hysteresis loop, leakage current behavior and capacitance - voltage characteristic of the LCO/PZT/LSCO were asymmetric. Post annealing treatment at reducing atmosphere further increased the relaxation of the unstable remanenet polarization.

UR - https://www.scopus.com/pages/publications/11744271367

U2 - 10.1051/jp4:1998918

DO - 10.1051/jp4:1998918

M3 - Article

AN - SCOPUS:11744271367

SN - 1155-4339

VL - 8

SP - Pr9-109-Pr9-112

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 9

ER -

Asymmetric properties of Pb(Zr,Ti)O₃ thin film capacitors with conducting oxides

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