Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review

Zhong Pan; Yifan Hu; Jingwen Chen; Fucheng Wang; Yeojin Jeong; Duy Phong Pham; Junsin Yi

doi:10.1007/s42341-024-00536-1

Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review

Zhong Pan
, Yifan Hu
, Jingwen Chen
, Fucheng Wang
, Yeojin Jeong
, Duy Phong Pham
, Junsin Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Review article › peer-review

46 Scopus citations

Abstract

Among metal oxide material TFTs, IGZO TFTs are highly regarded for their exceptionally high mobility, exceeding 10 cm²/V·s, remarkable transparency of more than 80%, and their adaptable low-temperature fabrication techniques. High-performance displays operating at refresh rates of up to 144 Hz and undergoing millions of device switches demand IGZO TFTs with mobility exceeding 20 cm²/V·s and higher stability against impulse stress. The effect of IGZO material composition on device stability and recent strategies to promote the mobility and stability of IGZO TFT by modifying the transistor structure, preparation process, and post-processing techniques to reduce V_O have been discussed. The paper describes the application of IGZO TFTs in flexible electronics. Graphical Abstract: (Figure presented.)

Original language	English
Pages (from-to)	371-379
Number of pages	9
Journal	Transactions on Electrical and Electronic Materials
Volume	25
Issue number	4
DOIs	https://doi.org/10.1007/s42341-024-00536-1
State	Published - Aug 2024

Keywords

Annealing
IGZO
Oxygen vacancy
Passivation layer
Process
Thin film transistor

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10.1007/s42341-024-00536-1

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title = "Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review",

abstract = "Among metal oxide material TFTs, IGZO TFTs are highly regarded for their exceptionally high mobility, exceeding 10 cm²/V·s, remarkable transparency of more than 80\%, and their adaptable low-temperature fabrication techniques. High-performance displays operating at refresh rates of up to 144 Hz and undergoing millions of device switches demand IGZO TFTs with mobility exceeding 20 cm²/V·s and higher stability against impulse stress. The effect of IGZO material composition on device stability and recent strategies to promote the mobility and stability of IGZO TFT by modifying the transistor structure, preparation process, and post-processing techniques to reduce VO have been discussed. The paper describes the application of IGZO TFTs in flexible electronics. Graphical Abstract: (Figure presented.)",

keywords = "Annealing, IGZO, Oxygen vacancy, Passivation layer, Process, Thin film transistor",

author = "Zhong Pan and Yifan Hu and Jingwen Chen and Fucheng Wang and Yeojin Jeong and Pham, \{Duy Phong\} and Junsin Yi",

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T1 - Approaches to Improve Mobility and Stability of IGZO TFTs

T2 - A Brief Review

AU - Pan, Zhong

AU - Hu, Yifan

AU - Chen, Jingwen

AU - Wang, Fucheng

AU - Jeong, Yeojin

AU - Pham, Duy Phong

AU - Yi, Junsin

N1 - Publisher Copyright: © The Korean Institute of Electrical and Electronic Material Engineers 2024.

PY - 2024/8

Y1 - 2024/8

N2 - Among metal oxide material TFTs, IGZO TFTs are highly regarded for their exceptionally high mobility, exceeding 10 cm²/V·s, remarkable transparency of more than 80%, and their adaptable low-temperature fabrication techniques. High-performance displays operating at refresh rates of up to 144 Hz and undergoing millions of device switches demand IGZO TFTs with mobility exceeding 20 cm²/V·s and higher stability against impulse stress. The effect of IGZO material composition on device stability and recent strategies to promote the mobility and stability of IGZO TFT by modifying the transistor structure, preparation process, and post-processing techniques to reduce VO have been discussed. The paper describes the application of IGZO TFTs in flexible electronics. Graphical Abstract: (Figure presented.)

AB - Among metal oxide material TFTs, IGZO TFTs are highly regarded for their exceptionally high mobility, exceeding 10 cm²/V·s, remarkable transparency of more than 80%, and their adaptable low-temperature fabrication techniques. High-performance displays operating at refresh rates of up to 144 Hz and undergoing millions of device switches demand IGZO TFTs with mobility exceeding 20 cm²/V·s and higher stability against impulse stress. The effect of IGZO material composition on device stability and recent strategies to promote the mobility and stability of IGZO TFT by modifying the transistor structure, preparation process, and post-processing techniques to reduce VO have been discussed. The paper describes the application of IGZO TFTs in flexible electronics. Graphical Abstract: (Figure presented.)

KW - Annealing

KW - IGZO

KW - Oxygen vacancy

KW - Passivation layer

KW - Process

KW - Thin film transistor

UR - https://www.scopus.com/pages/publications/85191689595

U2 - 10.1007/s42341-024-00536-1

DO - 10.1007/s42341-024-00536-1

M3 - Review article

AN - SCOPUS:85191689595

SN - 1229-7607

VL - 25

SP - 371

EP - 379

JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

IS - 4

ER -

Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review

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Keywords

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