Application of fin structure factor to reduce the body effect in 20 nm DRAM cells

Body effect-a key characteristic of dynamic random access memory (DRAM) cell transistors-is affected by the length and width of conventional planar transistors. However, in buried channel structures developed recently, the fin structure is also known to affect the properties of a transistor. In this paper, the effect of the fin structure on the body effect of a DRAM cell is investigated. In addition, a scheme for reducing this effect is suggested. In order to measure the body effect in a DRAM cell, a nondestructive measurement method was used. This method uses a memory test system for fast, massive, nondestructive measurement. Using the measured data, we compared the body effect and the fin dimension. The results show that there is a strong correlation between the fin height and the body effect.