Anomalous tin chemical bonding in indium-zinc-tin oxide films and their thin film transistor performance

So Hee Kim; Cheol Hyoun Ahn; Myeong Gu Yun; Sung Woon Cho; Hyung Koun Cho

doi:10.1088/0022-3727/47/48/485101

Anomalous tin chemical bonding in indium-zinc-tin oxide films and their thin film transistor performance

So Hee Kim, Cheol Hyoun Ahn, Myeong Gu Yun, Sung Woon Cho, Hyung Koun Cho

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We deposited InZnSnO (IZTO) channel layers, where indium (In) composition was controlled from 0 to 28.4 at%. Oxide thin-film-transistors (TFTs) based on these IZTO channels have shown a remarkable field effect mobility of>30 cm² V^-1 s^-1, low sub-threshold swing and good stability, compared to the ZTO TFTs. From x-ray photoelectron spectroscopy results, we found that the IZTO film containing 19.4 at % In showed enhanced intensity from the anomalous Sn²⁺ related chemical bonding. The incorporation of In elements promotes the formation of Sn²⁺-O^2- binding in the IZTO films, resulting in compensation for the oxygen vacancies in the IZTO films. Thus, moderate incorporation in the ZTO led to improved stability and high field effect mobility simultaneously.

Original language	English
Article number	485101
Journal	Journal of Physics D: Applied Physics
Volume	47
Issue number	48
DOIs	https://doi.org/10.1088/0022-3727/47/48/485101
State	Published - 3 Dec 2014

Keywords

high mobility
InZnSnO
stability
thin-film-transistors

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10.1088/0022-3727/47/48/485101

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title = "Anomalous tin chemical bonding in indium-zinc-tin oxide films and their thin film transistor performance",

abstract = "We deposited InZnSnO (IZTO) channel layers, where indium (In) composition was controlled from 0 to 28.4 at\%. Oxide thin-film-transistors (TFTs) based on these IZTO channels have shown a remarkable field effect mobility of>30 cm2 V-1 s-1, low sub-threshold swing and good stability, compared to the ZTO TFTs. From x-ray photoelectron spectroscopy results, we found that the IZTO film containing 19.4 at \% In showed enhanced intensity from the anomalous Sn2+ related chemical bonding. The incorporation of In elements promotes the formation of Sn2+-O2- binding in the IZTO films, resulting in compensation for the oxygen vacancies in the IZTO films. Thus, moderate incorporation in the ZTO led to improved stability and high field effect mobility simultaneously.",

keywords = "high mobility, InZnSnO, stability, thin-film-transistors",

author = "Kim, \{So Hee\} and Ahn, \{Cheol Hyoun\} and Yun, \{Myeong Gu\} and Cho, \{Sung Woon\} and Cho, \{Hyung Koun\}",

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doi = "10.1088/0022-3727/47/48/485101",

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T1 - Anomalous tin chemical bonding in indium-zinc-tin oxide films and their thin film transistor performance

AU - Kim, So Hee

AU - Ahn, Cheol Hyoun

AU - Yun, Myeong Gu

AU - Cho, Sung Woon

AU - Cho, Hyung Koun

PY - 2014/12/3

Y1 - 2014/12/3

N2 - We deposited InZnSnO (IZTO) channel layers, where indium (In) composition was controlled from 0 to 28.4 at%. Oxide thin-film-transistors (TFTs) based on these IZTO channels have shown a remarkable field effect mobility of>30 cm2 V-1 s-1, low sub-threshold swing and good stability, compared to the ZTO TFTs. From x-ray photoelectron spectroscopy results, we found that the IZTO film containing 19.4 at % In showed enhanced intensity from the anomalous Sn2+ related chemical bonding. The incorporation of In elements promotes the formation of Sn2+-O2- binding in the IZTO films, resulting in compensation for the oxygen vacancies in the IZTO films. Thus, moderate incorporation in the ZTO led to improved stability and high field effect mobility simultaneously.

AB - We deposited InZnSnO (IZTO) channel layers, where indium (In) composition was controlled from 0 to 28.4 at%. Oxide thin-film-transistors (TFTs) based on these IZTO channels have shown a remarkable field effect mobility of>30 cm2 V-1 s-1, low sub-threshold swing and good stability, compared to the ZTO TFTs. From x-ray photoelectron spectroscopy results, we found that the IZTO film containing 19.4 at % In showed enhanced intensity from the anomalous Sn2+ related chemical bonding. The incorporation of In elements promotes the formation of Sn2+-O2- binding in the IZTO films, resulting in compensation for the oxygen vacancies in the IZTO films. Thus, moderate incorporation in the ZTO led to improved stability and high field effect mobility simultaneously.

KW - high mobility

KW - InZnSnO

KW - stability

KW - thin-film-transistors

UR - https://www.scopus.com/pages/publications/84910664464

U2 - 10.1088/0022-3727/47/48/485101

DO - 10.1088/0022-3727/47/48/485101

M3 - Article

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SN - 0022-3727

VL - 47

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

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M1 - 485101

ER -

Anomalous tin chemical bonding in indium-zinc-tin oxide films and their thin film transistor performance

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Keywords

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