Annealing effects on the transparent zinc tin oxide thin film transistor and circuit applications

Min Suk Oh; Yong Hoon Kim; Sang Jun Oh; Yoon Kwon Kyung

Annealing effects on the transparent zinc tin oxide thin film transistor and circuit applications

Min Suk Oh
, Yong Hoon Kim
, Sang Jun Oh
, Yoon Kwon Kyung

Korea Electronics Technology Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report about the annealing effects on the characteristics of Zinc Tin Oxide (ZTO) thin film transistors (TFTs) and the circuit applications. To improve the properties of devices, we annealed the devices using various sequences. Here, we could improve the characteristics of ZTO TFTs and inverters using these simple and adequate annealing processes. When we annealed the device after source/drain electrode deposition, the subthreshold swing was improved and threshold voltage shifted to the positive direction compared with the device annealed before electrode deposition. So we could control the properties of devices by simple annealing process and enhance the static characteristics of inverter devices.

Original language	English
Title of host publication	10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages	167-168
Number of pages	2
State	Published - 2010
Externally published	Yes
Event	10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of Duration: 11 Oct 2010 → 15 Oct 2010

Publication series

Name	Proceedings of International Meeting on Information Display
ISSN (Print)	1738-7558

Conference

Conference	10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Country/Territory	Korea, Republic of
City	Seoul
Period	11/10/10 → 15/10/10

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Annealing
Inverter
TFT
ZTO

Cite this

Oh, M. S., Kim, Y. H., Oh, S. J., & Kyung, Y. K. (2010). Annealing effects on the transparent zinc tin oxide thin film transistor and circuit applications. In 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 (pp. 167-168). (Proceedings of International Meeting on Information Display).

Oh, Min Suk ; Kim, Yong Hoon ; Oh, Sang Jun et al. / Annealing effects on the transparent zinc tin oxide thin film transistor and circuit applications. 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010. 2010. pp. 167-168 (Proceedings of International Meeting on Information Display).

@inproceedings{e4c5a297ab484ba0b5c367d50d1a3ce5,

title = "Annealing effects on the transparent zinc tin oxide thin film transistor and circuit applications",

abstract = "We report about the annealing effects on the characteristics of Zinc Tin Oxide (ZTO) thin film transistors (TFTs) and the circuit applications. To improve the properties of devices, we annealed the devices using various sequences. Here, we could improve the characteristics of ZTO TFTs and inverters using these simple and adequate annealing processes. When we annealed the device after source/drain electrode deposition, the subthreshold swing was improved and threshold voltage shifted to the positive direction compared with the device annealed before electrode deposition. So we could control the properties of devices by simple annealing process and enhance the static characteristics of inverter devices.",

keywords = "Annealing, Inverter, TFT, ZTO",

author = "Oh, \{Min Suk\} and Kim, \{Yong Hoon\} and Oh, \{Sang Jun\} and Kyung, \{Yoon Kwon\}",

year = "2010",

language = "English",

isbn = "9781617827020",

series = "Proceedings of International Meeting on Information Display",

pages = "167--168",

booktitle = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010",

note = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 ; Conference date: 11-10-2010 Through 15-10-2010",

}

Oh, MS, Kim, YH, Oh, SJ & Kyung, YK 2010, Annealing effects on the transparent zinc tin oxide thin film transistor and circuit applications. in 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010. Proceedings of International Meeting on Information Display, pp. 167-168, 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010, Seoul, Korea, Republic of, 11/10/10.

Annealing effects on the transparent zinc tin oxide thin film transistor and circuit applications. / Oh, Min Suk; Kim, Yong Hoon; Oh, Sang Jun et al.
10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010. 2010. p. 167-168 (Proceedings of International Meeting on Information Display).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Annealing effects on the transparent zinc tin oxide thin film transistor and circuit applications

AU - Oh, Min Suk

AU - Kim, Yong Hoon

AU - Oh, Sang Jun

AU - Kyung, Yoon Kwon

PY - 2010

Y1 - 2010

N2 - We report about the annealing effects on the characteristics of Zinc Tin Oxide (ZTO) thin film transistors (TFTs) and the circuit applications. To improve the properties of devices, we annealed the devices using various sequences. Here, we could improve the characteristics of ZTO TFTs and inverters using these simple and adequate annealing processes. When we annealed the device after source/drain electrode deposition, the subthreshold swing was improved and threshold voltage shifted to the positive direction compared with the device annealed before electrode deposition. So we could control the properties of devices by simple annealing process and enhance the static characteristics of inverter devices.

AB - We report about the annealing effects on the characteristics of Zinc Tin Oxide (ZTO) thin film transistors (TFTs) and the circuit applications. To improve the properties of devices, we annealed the devices using various sequences. Here, we could improve the characteristics of ZTO TFTs and inverters using these simple and adequate annealing processes. When we annealed the device after source/drain electrode deposition, the subthreshold swing was improved and threshold voltage shifted to the positive direction compared with the device annealed before electrode deposition. So we could control the properties of devices by simple annealing process and enhance the static characteristics of inverter devices.

KW - Annealing

KW - Inverter

KW - TFT

KW - ZTO

UR - https://www.scopus.com/pages/publications/79959938744

M3 - Conference contribution

AN - SCOPUS:79959938744

SN - 9781617827020

T3 - Proceedings of International Meeting on Information Display

SP - 167

EP - 168

BT - 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010

T2 - 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010

Y2 - 11 October 2010 through 15 October 2010

ER -

Annealing effects on the transparent zinc tin oxide thin film transistor and circuit applications

Abstract

Publication series

Conference

UN SDGs

Keywords

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