Annealing effects on the transparent zinc tin oxide thin film transistor and circuit applications

Min Suk Oh, Yong Hoon Kim, Sang Jun Oh, Yoon Kwon Kyung

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report about the annealing effects on the characteristics of Zinc Tin Oxide (ZTO) thin film transistors (TFTs) and the circuit applications. To improve the properties of devices, we annealed the devices using various sequences. Here, we could improve the characteristics of ZTO TFTs and inverters using these simple and adequate annealing processes. When we annealed the device after source/drain electrode deposition, the subthreshold swing was improved and threshold voltage shifted to the positive direction compared with the device annealed before electrode deposition. So we could control the properties of devices by simple annealing process and enhance the static characteristics of inverter devices.

Original languageEnglish
Title of host publication10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages167-168
Number of pages2
StatePublished - 2010
Externally publishedYes
Event10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of
Duration: 11 Oct 201015 Oct 2010

Publication series

NameProceedings of International Meeting on Information Display
ISSN (Print)1738-7558

Conference

Conference10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Country/TerritoryKorea, Republic of
CitySeoul
Period11/10/1015/10/10

Keywords

  • Annealing
  • Inverter
  • TFT
  • ZTO

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