Annealing effects of low pressure mercury and excimer laser light on degraded a-Si:H TFTs

S. K. Lee; C. H. Oh; Y. S. Kim; J. S. Park; Y. I. Choi; J. Jang; M. K. Han

doi:10.1016/0022-3093(93)91109-G

Annealing effects of low pressure mercury and excimer laser light on degraded a-Si:H TFTs

S. K. Lee, C. H. Oh, Y. S. Kim, J. S. Park, Y. I. Choi, J. Jang, M. K. Han

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have investigated the effects of ultraviolet (UV) irradiation on the characteristics of a-Si:H films and a-Si:H TFTs by employing both a low-pressure mercury lamp and an excimer laser. The intensity of the XeCl excimer laser was varied from 10 to 80 mJ/cm². The electrical properties of a-Si:H films and the characteristics of TFTs that were degraded by various stresses such as visible light soaking (130,000 1x, 1∼8 hrs) and electrical stress (30 V, 8 hrs) for a long period, recovered considerably to their original states after exposure.

Original language	English
Pages (from-to)	763-766
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	164-166
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(93)91109-G
State	Published - 2 Dec 1993
Externally published	Yes

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title = "Annealing effects of low pressure mercury and excimer laser light on degraded a-Si:H TFTs",

abstract = "We have investigated the effects of ultraviolet (UV) irradiation on the characteristics of a-Si:H films and a-Si:H TFTs by employing both a low-pressure mercury lamp and an excimer laser. The intensity of the XeCl excimer laser was varied from 10 to 80 mJ/cm2. The electrical properties of a-Si:H films and the characteristics of TFTs that were degraded by various stresses such as visible light soaking (130,000 1x, 1∼8 hrs) and electrical stress (30 V, 8 hrs) for a long period, recovered considerably to their original states after exposure.",

author = "Lee, \{S. K.\} and Oh, \{C. H.\} and Kim, \{Y. S.\} and Park, \{J. S.\} and Choi, \{Y. I.\} and J. Jang and Han, \{M. K.\}",

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doi = "10.1016/0022-3093(93)91109-G",

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T1 - Annealing effects of low pressure mercury and excimer laser light on degraded a-Si:H TFTs

AU - Lee, S. K.

AU - Oh, C. H.

AU - Kim, Y. S.

AU - Park, J. S.

AU - Choi, Y. I.

AU - Jang, J.

AU - Han, M. K.

PY - 1993/12/2

Y1 - 1993/12/2

N2 - We have investigated the effects of ultraviolet (UV) irradiation on the characteristics of a-Si:H films and a-Si:H TFTs by employing both a low-pressure mercury lamp and an excimer laser. The intensity of the XeCl excimer laser was varied from 10 to 80 mJ/cm2. The electrical properties of a-Si:H films and the characteristics of TFTs that were degraded by various stresses such as visible light soaking (130,000 1x, 1∼8 hrs) and electrical stress (30 V, 8 hrs) for a long period, recovered considerably to their original states after exposure.

AB - We have investigated the effects of ultraviolet (UV) irradiation on the characteristics of a-Si:H films and a-Si:H TFTs by employing both a low-pressure mercury lamp and an excimer laser. The intensity of the XeCl excimer laser was varied from 10 to 80 mJ/cm2. The electrical properties of a-Si:H films and the characteristics of TFTs that were degraded by various stresses such as visible light soaking (130,000 1x, 1∼8 hrs) and electrical stress (30 V, 8 hrs) for a long period, recovered considerably to their original states after exposure.

UR - https://www.scopus.com/pages/publications/0027906980

U2 - 10.1016/0022-3093(93)91109-G

DO - 10.1016/0022-3093(93)91109-G

M3 - Article

AN - SCOPUS:0027906980

SN - 0022-3093

VL - 164-166

SP - 763

EP - 766

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Annealing effects of low pressure mercury and excimer laser light on degraded a-Si:H TFTs

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