Annealing effect of PbS quantum dot solar cells

Jianbo Gao; Sohee Jeong; Octavi E. Semonin; Randy J. Ellingson; Arthur J. Nozik; Matthew C. Beard

doi:10.1109/PVSC.2011.6186485

Annealing effect of PbS quantum dot solar cells

Jianbo Gao
, Sohee Jeong
, Octavi E. Semonin
, Randy J. Ellingson
, Arthur J. Nozik
, Matthew C. Beard

National Renewable Energy Laboratory
University of Toledo
Korea Institute of Machinery and Materials
University of Colorado Boulder

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

We recently reported an NREL certified ∼3% efficient device with structure of ITO/ZnO/PbS QD/Au. The device is remarkably stable in air without encapsulation for more than 1000 hours. Therefore, in this study we focus on devices with structure of ITO/ZnO/PbS QD/metal fabricated in air. By annealing PbS QD film at low temperature up to 140C, the solar cell efficiency can be achieved to more than 4%.

Original language	English
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	2619-2621
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2011.6186485
State	Published - 2011
Externally published	Yes
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	19/06/11 → 24/06/11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/PVSC.2011.6186485

Cite this

@inproceedings{a062d216bf8b4a38a6a6de0952f95c49,

title = "Annealing effect of PbS quantum dot solar cells",

abstract = "We recently reported an NREL certified ∼3\% efficient device with structure of ITO/ZnO/PbS QD/Au. The device is remarkably stable in air without encapsulation for more than 1000 hours. Therefore, in this study we focus on devices with structure of ITO/ZnO/PbS QD/metal fabricated in air. By annealing PbS QD film at low temperature up to 140C, the solar cell efficiency can be achieved to more than 4\%.",

author = "Jianbo Gao and Sohee Jeong and Semonin, \{Octavi E.\} and Ellingson, \{Randy J.\} and Nozik, \{Arthur J.\} and Beard, \{Matthew C.\}",

year = "2011",

doi = "10.1109/PVSC.2011.6186485",

language = "English",

isbn = "9781424499656",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "2619--2621",

booktitle = "Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011",

note = "37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

}

Gao, J, Jeong, S, Semonin, OE, Ellingson, RJ, Nozik, AJ & Beard, MC 2011, Annealing effect of PbS quantum dot solar cells. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186485, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2619-2621, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 19/06/11. https://doi.org/10.1109/PVSC.2011.6186485

Annealing effect of PbS quantum dot solar cells. / Gao, Jianbo; Jeong, Sohee; Semonin, Octavi E. et al.
Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 2619-2621 6186485 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Annealing effect of PbS quantum dot solar cells

AU - Gao, Jianbo

AU - Jeong, Sohee

AU - Semonin, Octavi E.

AU - Ellingson, Randy J.

AU - Nozik, Arthur J.

AU - Beard, Matthew C.

PY - 2011

Y1 - 2011

N2 - We recently reported an NREL certified ∼3% efficient device with structure of ITO/ZnO/PbS QD/Au. The device is remarkably stable in air without encapsulation for more than 1000 hours. Therefore, in this study we focus on devices with structure of ITO/ZnO/PbS QD/metal fabricated in air. By annealing PbS QD film at low temperature up to 140C, the solar cell efficiency can be achieved to more than 4%.

AB - We recently reported an NREL certified ∼3% efficient device with structure of ITO/ZnO/PbS QD/Au. The device is remarkably stable in air without encapsulation for more than 1000 hours. Therefore, in this study we focus on devices with structure of ITO/ZnO/PbS QD/metal fabricated in air. By annealing PbS QD film at low temperature up to 140C, the solar cell efficiency can be achieved to more than 4%.

UR - https://www.scopus.com/pages/publications/84861068488

U2 - 10.1109/PVSC.2011.6186485

DO - 10.1109/PVSC.2011.6186485

M3 - Conference contribution

AN - SCOPUS:84861068488

SN - 9781424499656

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2619

EP - 2621

BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

Y2 - 19 June 2011 through 24 June 2011

ER -

Annealing effect of PbS quantum dot solar cells

Abstract

Publication series

Conference

UN SDGs

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