Angular dependences of SiO 2 etch rates in C 4F 6/O 2/Ar and C 4F 6/CH 2F 2/O 2/Ar plasmas

Sung Woon Cho; Chang Koo Kim; Jin Kwan Lee; Sang Heup Moon; Heeyeop Chae

doi:10.1116/1.4732127

Angular dependences of SiO ₂ etch rates in C ₄F ₆/O ₂/Ar and C ₄F ₆/CH ₂F ₂/O ₂/Ar plasmas

Sung Woon Cho
, Chang Koo Kim
, Jin Kwan Lee
, Sang Heup Moon
, Heeyeop Chae

Department of Chemical Engineering

Ajou University
Seoul National University
Samsung

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The angular dependences of SiO ₂ etch rates for C ₄F ₆/O ₂/Ar and C ₄F ₆/CH ₂F ₂/O ₂/Ar plasmas were investigated using a Faraday cage system. In the absence of CH ₂F ₂, the steady-state fluorocarbon film that formed on the SiO ₂ surface was thin enough (10 Å) for ions to penetrate through the film. The normalized etch yield (NEY) curve in this case showed a maximum value of 1.74 at an ion-incident angle of 70°, illustrating that physical sputtering was a major contributor to the SiO ₂ etching. The addition of CH ₂F ₂ to C ₄F ₆/O ₂/Ar plasmas produced thicker and more etch-resistant fluorocarbon films, leading to a decrease in the ion energy transfer depth through the steady-state films. This implies that physical sputtering was suppressed when CH ₂F ₂ was present in the plasma, demonstrated by a decrease in the maximum NEY and the ion-incident angle at the maximum NEY.

Original language	English
Article number	051301
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	30
Issue number	5
DOIs	https://doi.org/10.1116/1.4732127
State	Published - Sep 2012

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title = "Angular dependences of SiO 2 etch rates in C 4F 6/O 2/Ar and C 4F 6/CH 2F 2/O 2/Ar plasmas",

abstract = "The angular dependences of SiO 2 etch rates for C 4F 6/O 2/Ar and C 4F 6/CH 2F 2/O 2/Ar plasmas were investigated using a Faraday cage system. In the absence of CH 2F 2, the steady-state fluorocarbon film that formed on the SiO 2 surface was thin enough (10 {\AA}) for ions to penetrate through the film. The normalized etch yield (NEY) curve in this case showed a maximum value of 1.74 at an ion-incident angle of 70°, illustrating that physical sputtering was a major contributor to the SiO 2 etching. The addition of CH 2F 2 to C 4F 6/O 2/Ar plasmas produced thicker and more etch-resistant fluorocarbon films, leading to a decrease in the ion energy transfer depth through the steady-state films. This implies that physical sputtering was suppressed when CH 2F 2 was present in the plasma, demonstrated by a decrease in the maximum NEY and the ion-incident angle at the maximum NEY.",

author = "Cho, \{Sung Woon\} and Kim, \{Chang Koo\} and Lee, \{Jin Kwan\} and Moon, \{Sang Heup\} and Heeyeop Chae",

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T1 - Angular dependences of SiO 2 etch rates in C 4F 6/O 2/Ar and C 4F 6/CH 2F 2/O 2/Ar plasmas

AU - Cho, Sung Woon

AU - Kim, Chang Koo

AU - Lee, Jin Kwan

AU - Moon, Sang Heup

AU - Chae, Heeyeop

PY - 2012/9

Y1 - 2012/9

N2 - The angular dependences of SiO 2 etch rates for C 4F 6/O 2/Ar and C 4F 6/CH 2F 2/O 2/Ar plasmas were investigated using a Faraday cage system. In the absence of CH 2F 2, the steady-state fluorocarbon film that formed on the SiO 2 surface was thin enough (10 Å) for ions to penetrate through the film. The normalized etch yield (NEY) curve in this case showed a maximum value of 1.74 at an ion-incident angle of 70°, illustrating that physical sputtering was a major contributor to the SiO 2 etching. The addition of CH 2F 2 to C 4F 6/O 2/Ar plasmas produced thicker and more etch-resistant fluorocarbon films, leading to a decrease in the ion energy transfer depth through the steady-state films. This implies that physical sputtering was suppressed when CH 2F 2 was present in the plasma, demonstrated by a decrease in the maximum NEY and the ion-incident angle at the maximum NEY.

AB - The angular dependences of SiO 2 etch rates for C 4F 6/O 2/Ar and C 4F 6/CH 2F 2/O 2/Ar plasmas were investigated using a Faraday cage system. In the absence of CH 2F 2, the steady-state fluorocarbon film that formed on the SiO 2 surface was thin enough (10 Å) for ions to penetrate through the film. The normalized etch yield (NEY) curve in this case showed a maximum value of 1.74 at an ion-incident angle of 70°, illustrating that physical sputtering was a major contributor to the SiO 2 etching. The addition of CH 2F 2 to C 4F 6/O 2/Ar plasmas produced thicker and more etch-resistant fluorocarbon films, leading to a decrease in the ion energy transfer depth through the steady-state films. This implies that physical sputtering was suppressed when CH 2F 2 was present in the plasma, demonstrated by a decrease in the maximum NEY and the ion-incident angle at the maximum NEY.

UR - https://www.scopus.com/pages/publications/84865462985

U2 - 10.1116/1.4732127

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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ER -

Angular dependences of SiO ₂ etch rates in C ₄F ₆/O ₂/Ar and C ₄F ₆/CH ₂F ₂/O ₂/Ar plasmas

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