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Analysis of V-shaped pits originated from threading dislocation in III-nitrides compound for light emitting diodes

  • Samsung
  • Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, problems of v-shaped pits originated from threading dislocation that can occur during the fabrication of light emitting diode and ways to solve these problems were introduced. First of all the electrical properties were measured by observable point of a v-shaped pit, then a form of v-shaped pit was separated according to the electrical properties. We found a correlation between the electrical properties and the form of v-shaped pit. Furthermore we knew that the particular form of v-shaped pit led to a leakage current. Consequentially, the improvement of these leakage current from v-shaped pits was proposed.

Original languageEnglish
Pages (from-to)313-317
Number of pages5
JournalECS Transactions
Volume61
Issue number4
DOIs
StatePublished - 2014
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States
Duration: 11 May 2014 → 15 May 2014

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