Analysis of thin film silicon for photovoltaic applications

J. Yi; R. Wallace; B. Jaganathan; X. Gu; K. Etemadi; W. A. Anderson

Analysis of thin film silicon for photovoltaic applications

J. Yi, R. Wallace, B. Jaganathan, X. Gu, K. Etemadi, W. A. Anderson

SUNY Buffalo

Research output: Contribution to journal › Conference article › peer-review

Abstract

The properties of thin film amorphous and poly-Si are characterized focusing on the heterostructure type solar cell. Removal of the Mo substrate enabled the analysis of bare thin film Si as well as vertical and lateral structural properties. Through thermally stimulated current (TSC) measurement, the poly-Si grain boundary trap type and activation energy are determined. Lastly, by using RF plasma, hydrogen grain boundary passivation is achieved.

Original language	English
Pages (from-to)	1571-1574
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA Duration: 5 Dec 1994 → 9 Dec 1994

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Cite this

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title = "Analysis of thin film silicon for photovoltaic applications",

abstract = "The properties of thin film amorphous and poly-Si are characterized focusing on the heterostructure type solar cell. Removal of the Mo substrate enabled the analysis of bare thin film Si as well as vertical and lateral structural properties. Through thermally stimulated current (TSC) measurement, the poly-Si grain boundary trap type and activation energy are determined. Lastly, by using RF plasma, hydrogen grain boundary passivation is achieved.",

author = "J. Yi and R. Wallace and B. Jaganathan and X. Gu and K. Etemadi and Anderson, \{W. A.\}",

year = "1994",

language = "English",

volume = "2",

pages = "1571--1574",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) ; Conference date: 05-12-1994 Through 09-12-1994",

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TY - JOUR

T1 - Analysis of thin film silicon for photovoltaic applications

AU - Yi, J.

AU - Wallace, R.

AU - Jaganathan, B.

AU - Gu, X.

AU - Etemadi, K.

AU - Anderson, W. A.

PY - 1994

Y1 - 1994

N2 - The properties of thin film amorphous and poly-Si are characterized focusing on the heterostructure type solar cell. Removal of the Mo substrate enabled the analysis of bare thin film Si as well as vertical and lateral structural properties. Through thermally stimulated current (TSC) measurement, the poly-Si grain boundary trap type and activation energy are determined. Lastly, by using RF plasma, hydrogen grain boundary passivation is achieved.

AB - The properties of thin film amorphous and poly-Si are characterized focusing on the heterostructure type solar cell. Removal of the Mo substrate enabled the analysis of bare thin film Si as well as vertical and lateral structural properties. Through thermally stimulated current (TSC) measurement, the poly-Si grain boundary trap type and activation energy are determined. Lastly, by using RF plasma, hydrogen grain boundary passivation is achieved.

UR - https://www.scopus.com/pages/publications/0028705360

M3 - Conference article

AN - SCOPUS:0028705360

SN - 0160-8371

VL - 2

SP - 1571

EP - 1574

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)

Y2 - 5 December 1994 through 9 December 1994

ER -

Analysis of thin film silicon for photovoltaic applications

Abstract

UN SDGs

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