Analysis of Selective Emitter Formation Technology of n-TOPCon Solar Cell

Sungjin Jeong; Yewon Cha; Sungheon Kim; Hongrae Kim; Somin Park; Taeyong Kim; Jinjoo Park; Minkyu Ju; Junsin Yi

doi:10.5370/KIEE.2022.71.1.114

Analysis of Selective Emitter Formation Technology of n-TOPCon Solar Cell

Sungjin Jeong
, Yewon Cha
, Sungheon Kim
, Hongrae Kim
, Somin Park
, Taeyong Kim
, Jinjoo Park
, Minkyu Ju
, Junsin Yi

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The main efficiency limiting factors for homogeneous emitter solar cells are resistance loss through metal contact on the front side and recombination loss at the surface. Herein, a selective emitter technology is introduced to solve the above problem, and it is currently commercialized in the mainstream p-PERC (Passivated Emitter Rear Contact) solar cell. The selective emitter boosts efficiency by 0.3-0.4% when compared to a homogeneous emitter, and when applied to the n-TOPCon (Tunnel Oxide Passivated Contact) solar cell, high efficiency of 26% or higher may be predicted. The most widely utilized selective emitter technologies are laser and etch-back. The One-Step Technology, which is suited to the n-TOPCon solar cell process, a laser is suitable for mass manufacturing with high yield. Because selective emitters increase electrical characteristics, which impact cell efficiency, it is required to study and create a technology that is optimal for the n-TOPCon manufacturing process.

Original language	English
Pages (from-to)	114-120
Number of pages	7
Journal	Transactions of the Korean Institute of Electrical Engineers
Volume	71
Issue number	1
DOIs	https://doi.org/10.5370/KIEE.2022.71.1.114
State	Published - Jan 2022

Keywords

High Efficiency
n-TOPCon
p-PERC
Selective Emitter

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.5370/KIEE.2022.71.1.114

Cite this

@article{54e19c8874f745b695b048df74d4a5c6,

title = "Analysis of Selective Emitter Formation Technology of n-TOPCon Solar Cell",

abstract = "The main efficiency limiting factors for homogeneous emitter solar cells are resistance loss through metal contact on the front side and recombination loss at the surface. Herein, a selective emitter technology is introduced to solve the above problem, and it is currently commercialized in the mainstream p-PERC (Passivated Emitter Rear Contact) solar cell. The selective emitter boosts efficiency by 0.3-0.4\% when compared to a homogeneous emitter, and when applied to the n-TOPCon (Tunnel Oxide Passivated Contact) solar cell, high efficiency of 26\% or higher may be predicted. The most widely utilized selective emitter technologies are laser and etch-back. The One-Step Technology, which is suited to the n-TOPCon solar cell process, a laser is suitable for mass manufacturing with high yield. Because selective emitters increase electrical characteristics, which impact cell efficiency, it is required to study and create a technology that is optimal for the n-TOPCon manufacturing process.",

keywords = "High Efficiency, n-TOPCon, p-PERC, Selective Emitter",

author = "Sungjin Jeong and Yewon Cha and Sungheon Kim and Hongrae Kim and Somin Park and Taeyong Kim and Jinjoo Park and Minkyu Ju and Junsin Yi",

year = "2022",

month = jan,

doi = "10.5370/KIEE.2022.71.1.114",

language = "English",

volume = "71",

pages = "114--120",

journal = "Transactions of the Korean Institute of Electrical Engineers",

issn = "1975-8359",

publisher = "Korean Institute of Electrical Engineers",

number = "1",

}

TY - JOUR

T1 - Analysis of Selective Emitter Formation Technology of n-TOPCon Solar Cell

AU - Jeong, Sungjin

AU - Cha, Yewon

AU - Kim, Sungheon

AU - Kim, Hongrae

AU - Park, Somin

AU - Kim, Taeyong

AU - Park, Jinjoo

AU - Ju, Minkyu

AU - Yi, Junsin

PY - 2022/1

Y1 - 2022/1

N2 - The main efficiency limiting factors for homogeneous emitter solar cells are resistance loss through metal contact on the front side and recombination loss at the surface. Herein, a selective emitter technology is introduced to solve the above problem, and it is currently commercialized in the mainstream p-PERC (Passivated Emitter Rear Contact) solar cell. The selective emitter boosts efficiency by 0.3-0.4% when compared to a homogeneous emitter, and when applied to the n-TOPCon (Tunnel Oxide Passivated Contact) solar cell, high efficiency of 26% or higher may be predicted. The most widely utilized selective emitter technologies are laser and etch-back. The One-Step Technology, which is suited to the n-TOPCon solar cell process, a laser is suitable for mass manufacturing with high yield. Because selective emitters increase electrical characteristics, which impact cell efficiency, it is required to study and create a technology that is optimal for the n-TOPCon manufacturing process.

AB - The main efficiency limiting factors for homogeneous emitter solar cells are resistance loss through metal contact on the front side and recombination loss at the surface. Herein, a selective emitter technology is introduced to solve the above problem, and it is currently commercialized in the mainstream p-PERC (Passivated Emitter Rear Contact) solar cell. The selective emitter boosts efficiency by 0.3-0.4% when compared to a homogeneous emitter, and when applied to the n-TOPCon (Tunnel Oxide Passivated Contact) solar cell, high efficiency of 26% or higher may be predicted. The most widely utilized selective emitter technologies are laser and etch-back. The One-Step Technology, which is suited to the n-TOPCon solar cell process, a laser is suitable for mass manufacturing with high yield. Because selective emitters increase electrical characteristics, which impact cell efficiency, it is required to study and create a technology that is optimal for the n-TOPCon manufacturing process.

KW - High Efficiency

KW - n-TOPCon

KW - p-PERC

KW - Selective Emitter

UR - https://www.scopus.com/pages/publications/85124326409

U2 - 10.5370/KIEE.2022.71.1.114

DO - 10.5370/KIEE.2022.71.1.114

M3 - Article

AN - SCOPUS:85124326409

SN - 1975-8359

VL - 71

SP - 114

EP - 120

JO - Transactions of the Korean Institute of Electrical Engineers

JF - Transactions of the Korean Institute of Electrical Engineers

IS - 1

ER -

Analysis of Selective Emitter Formation Technology of n-TOPCon Solar Cell

Abstract

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this