Analysis and design of the doherty amplifier based on class F and inverse class F amplifiers

X. I. Yao, S. C. Jung, M. S. Kim, J. H. Van, H. Cho, S. W. Kwon, J. H. Jeong, K. H. Lim, C. S. Park, Y. Yang, H. C. Park

Research output: Contribution to specialist publicationArticle

1 Scopus citations

Abstract

In this article, a new Doherty amplifier using high-efficiency inverse class F and class F amplifiers is presented. The characteristics of inverse class F and class F amplifiers have been analyzed for their bias conditions and had impedances in order to identify their suitability to be the carrier or peaking amplifier in a Doherty amplifier. An inverse class F amplifier was employed for the carrier amplifier due to its superior linearity and efficiency performance over a wide range of had impedances. The class F amplifier was used for the peaking amplifier by virtue of its larger gain expansion characteristics. The proposed Doherty amplifier was configured using the implemented inverse class F and class F amplifiers for the 1 GHz band and evaluated using two-tone and downlink WCDMA signals. A state-of-the-art efficiency performance was achieved at a given linearity level: A power-added efficiency of 50.9 percent at a thirdorder intermodulation distortion level of-30 dBc from the two-tone test and 45.2 percent at an adjacent leakage power ratio of-30 dBc from the WCDMA test, respectively.

Original languageEnglish
Pages100-116
Number of pages17
Volume53
No3
Specialist publicationMicrowave Journal
StatePublished - Mar 2010

Fingerprint

Dive into the research topics of 'Analysis and design of the doherty amplifier based on class F and inverse class F amplifiers'. Together they form a unique fingerprint.

Cite this