TY - JOUR
T1 - Analysis and characterization of iron pyrite nanocrystals and nanocrystalline thin films derived from bromide anion synthesis
AU - Bhandari, Khagendra P.
AU - Roland, Paul J.
AU - Kinner, Tyler
AU - Cao, Yifang
AU - Choi, Hyekyoung
AU - Jeong, Sohee
AU - Ellingson, Randy J.
N1 - Publisher Copyright:
© 2015 The Royal Society of Chemistry.
PY - 2015/4/7
Y1 - 2015/4/7
N2 - We use a solution-based hot injection method to synthesize stable, phase pure and highly crystalline cubic iron pyrite (FeS2) nanocrystals, with size varying from ∼70 to 150 nm. We use iron(ii) bromide as an iron precursor, elemental sulfur as the sulfur source, trioctylphosphine oxide (TOPO) and 1,2-hexanediol as capping ligands, and oleylamine (OLA) as a non-coordinating solvent during the synthesis. We report on the influence of hydrazine treatment, and of thermal sintering, on the morphological, electronic, optical, and surface chemical properties of FeS2 films. Four point probe and Hall measurements indicate that these iron pyrite films are highly conductive. Although they are unsuitable as an effective photovoltaic light-absorbing layer, they offer clear potential as a conducting contact layer in photovoltaic and other optoelectronic devices.
AB - We use a solution-based hot injection method to synthesize stable, phase pure and highly crystalline cubic iron pyrite (FeS2) nanocrystals, with size varying from ∼70 to 150 nm. We use iron(ii) bromide as an iron precursor, elemental sulfur as the sulfur source, trioctylphosphine oxide (TOPO) and 1,2-hexanediol as capping ligands, and oleylamine (OLA) as a non-coordinating solvent during the synthesis. We report on the influence of hydrazine treatment, and of thermal sintering, on the morphological, electronic, optical, and surface chemical properties of FeS2 films. Four point probe and Hall measurements indicate that these iron pyrite films are highly conductive. Although they are unsuitable as an effective photovoltaic light-absorbing layer, they offer clear potential as a conducting contact layer in photovoltaic and other optoelectronic devices.
UR - https://www.scopus.com/pages/publications/84925064090
U2 - 10.1039/c4ta06320a
DO - 10.1039/c4ta06320a
M3 - Article
AN - SCOPUS:84925064090
SN - 2050-7488
VL - 3
SP - 6853
EP - 6861
JO - Journal of Materials Chemistry A
JF - Journal of Materials Chemistry A
IS - 13
ER -