An analysis for gate-source voltage of GaN HEMT focused on mutual switch effect in half-bridge structure

Hun Gyu Chae; Dong Hee Kim; Min Jung Kim; Byoung Kuk Lee

doi:10.5370/KIEE.2016.65.10.1664

An analysis for gate-source voltage of GaN HEMT focused on mutual switch effect in half-bridge structure

Hun Gyu Chae, Dong Hee Kim, Min Jung Kim, Byoung Kuk Lee

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.

Original language	English
Pages (from-to)	1664-1671
Number of pages	8
Journal	Transactions of the Korean Institute of Electrical Engineers
Volume	65
Issue number	10
DOIs	https://doi.org/10.5370/KIEE.2016.65.10.1664
State	Published - 1 Dec 2016
Externally published	Yes

Keywords

Gallium nitride high electronic mobility transistor (GaN HEMT)
Gate driver
Half-Bridge converter
Parasitic component model

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10.5370/KIEE.2016.65.10.1664

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title = "An analysis for gate-source voltage of GaN HEMT focused on mutual switch effect in half-bridge structure",

abstract = "This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.",

keywords = "Gallium nitride high electronic mobility transistor (GaN HEMT), Gate driver, Half-Bridge converter, Parasitic component model",

author = "Chae, \{Hun Gyu\} and Kim, \{Dong Hee\} and Kim, \{Min Jung\} and Lee, \{Byoung Kuk\}",

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T1 - An analysis for gate-source voltage of GaN HEMT focused on mutual switch effect in half-bridge structure

AU - Chae, Hun Gyu

AU - Kim, Dong Hee

AU - Kim, Min Jung

AU - Lee, Byoung Kuk

N1 - Publisher Copyright: © The Korean Institute of Electrical Engineers.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.

AB - This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.

KW - Gallium nitride high electronic mobility transistor (GaN HEMT)

KW - Gate driver

KW - Half-Bridge converter

KW - Parasitic component model

UR - https://www.scopus.com/pages/publications/85016785342

U2 - 10.5370/KIEE.2016.65.10.1664

DO - 10.5370/KIEE.2016.65.10.1664

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SN - 1975-8359

VL - 65

SP - 1664

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JO - Transactions of the Korean Institute of Electrical Engineers

JF - Transactions of the Korean Institute of Electrical Engineers

IS - 10

ER -

An analysis for gate-source voltage of GaN HEMT focused on mutual switch effect in half-bridge structure

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Keywords

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