Aluminum-doped zinc oxide formed by atomic layer deposition for use as anodes in organic light emitting diodes

Su Cheol Gong; Yong June Choi; Hyuncheol Kim; Chang Sun Park; Hyung Ho Park; Ji Geun Jang; Ho Jung Chang; Geun Young Yeom

doi:10.1116/1.4738749

Aluminum-doped zinc oxide formed by atomic layer deposition for use as anodes in organic light emitting diodes

Su Cheol Gong
, Yong June Choi
, Hyuncheol Kim
, Chang Sun Park
, Hyung Ho Park
, Ji Geun Jang
, Ho Jung Chang
, Geun Young Yeom

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Aluminum-doped zinc oxide films produced by atomic layer deposition were investigated for use as anodes in organic light emitting diode (OLED) devices. Al-doped ZnO (AZO) films (∼200 nm thick) were deposited at temperatures of 200, 230, and 260 °C and the AZO film deposited at 260 °C demonstrated carrier mobility, carrier concentration, resistivity, and transmittance values of 16.2 cm²V^-1s^-1, 5.18 × 10²⁰ cm^-3, 7.34 × 10^-4 Ωcm, and 90%, respectively. OLED devices with a DNTPD/TAPC/Bebq₂:10% doped RP-411/Bphen/LiF/Al structure on a glass substrate fabricated using an AZO anode formed at 260 °C showed turn-on voltage, maximum luminance, and current efficiency values of 5.3 V, 16680 cd/m², and 4.8 cd/A, respectively.

Original language	English
Article number	01A101
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	31
Issue number	1
DOIs	https://doi.org/10.1116/1.4738749
State	Published - Jan 2013

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title = "Aluminum-doped zinc oxide formed by atomic layer deposition for use as anodes in organic light emitting diodes",

abstract = "Aluminum-doped zinc oxide films produced by atomic layer deposition were investigated for use as anodes in organic light emitting diode (OLED) devices. Al-doped ZnO (AZO) films (∼200 nm thick) were deposited at temperatures of 200, 230, and 260 °C and the AZO film deposited at 260 °C demonstrated carrier mobility, carrier concentration, resistivity, and transmittance values of 16.2 cm2V-1s-1, 5.18 × 1020 cm-3, 7.34 × 10-4 Ωcm, and 90\%, respectively. OLED devices with a DNTPD/TAPC/Bebq2:10\% doped RP-411/Bphen/LiF/Al structure on a glass substrate fabricated using an AZO anode formed at 260 °C showed turn-on voltage, maximum luminance, and current efficiency values of 5.3 V, 16680 cd/m2, and 4.8 cd/A, respectively.",

author = "Gong, \{Su Cheol\} and Choi, \{Yong June\} and Hyuncheol Kim and Park, \{Chang Sun\} and Park, \{Hyung Ho\} and Jang, \{Ji Geun\} and Chang, \{Ho Jung\} and Yeom, \{Geun Young\}",

year = "2013",

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doi = "10.1116/1.4738749",

language = "English",

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journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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T1 - Aluminum-doped zinc oxide formed by atomic layer deposition for use as anodes in organic light emitting diodes

AU - Gong, Su Cheol

AU - Choi, Yong June

AU - Kim, Hyuncheol

AU - Park, Chang Sun

AU - Park, Hyung Ho

AU - Jang, Ji Geun

AU - Chang, Ho Jung

AU - Yeom, Geun Young

PY - 2013/1

Y1 - 2013/1

N2 - Aluminum-doped zinc oxide films produced by atomic layer deposition were investigated for use as anodes in organic light emitting diode (OLED) devices. Al-doped ZnO (AZO) films (∼200 nm thick) were deposited at temperatures of 200, 230, and 260 °C and the AZO film deposited at 260 °C demonstrated carrier mobility, carrier concentration, resistivity, and transmittance values of 16.2 cm2V-1s-1, 5.18 × 1020 cm-3, 7.34 × 10-4 Ωcm, and 90%, respectively. OLED devices with a DNTPD/TAPC/Bebq2:10% doped RP-411/Bphen/LiF/Al structure on a glass substrate fabricated using an AZO anode formed at 260 °C showed turn-on voltage, maximum luminance, and current efficiency values of 5.3 V, 16680 cd/m2, and 4.8 cd/A, respectively.

AB - Aluminum-doped zinc oxide films produced by atomic layer deposition were investigated for use as anodes in organic light emitting diode (OLED) devices. Al-doped ZnO (AZO) films (∼200 nm thick) were deposited at temperatures of 200, 230, and 260 °C and the AZO film deposited at 260 °C demonstrated carrier mobility, carrier concentration, resistivity, and transmittance values of 16.2 cm2V-1s-1, 5.18 × 1020 cm-3, 7.34 × 10-4 Ωcm, and 90%, respectively. OLED devices with a DNTPD/TAPC/Bebq2:10% doped RP-411/Bphen/LiF/Al structure on a glass substrate fabricated using an AZO anode formed at 260 °C showed turn-on voltage, maximum luminance, and current efficiency values of 5.3 V, 16680 cd/m2, and 4.8 cd/A, respectively.

UR - https://www.scopus.com/pages/publications/84871861887

U2 - 10.1116/1.4738749

DO - 10.1116/1.4738749

M3 - Article

AN - SCOPUS:84871861887

SN - 0734-2101

VL - 31

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 1

M1 - 01A101

ER -

Aluminum-doped zinc oxide formed by atomic layer deposition for use as anodes in organic light emitting diodes

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