TY - JOUR
T1 - Aluminum-doped zinc oxide formed by atomic layer deposition for use as anodes in organic light emitting diodes
AU - Gong, Su Cheol
AU - Choi, Yong June
AU - Kim, Hyuncheol
AU - Park, Chang Sun
AU - Park, Hyung Ho
AU - Jang, Ji Geun
AU - Chang, Ho Jung
AU - Yeom, Geun Young
PY - 2013/1
Y1 - 2013/1
N2 - Aluminum-doped zinc oxide films produced by atomic layer deposition were investigated for use as anodes in organic light emitting diode (OLED) devices. Al-doped ZnO (AZO) films (∼200 nm thick) were deposited at temperatures of 200, 230, and 260 °C and the AZO film deposited at 260 °C demonstrated carrier mobility, carrier concentration, resistivity, and transmittance values of 16.2 cm2V-1s-1, 5.18 × 1020 cm-3, 7.34 × 10-4 Ωcm, and 90%, respectively. OLED devices with a DNTPD/TAPC/Bebq2:10% doped RP-411/Bphen/LiF/Al structure on a glass substrate fabricated using an AZO anode formed at 260 °C showed turn-on voltage, maximum luminance, and current efficiency values of 5.3 V, 16680 cd/m2, and 4.8 cd/A, respectively.
AB - Aluminum-doped zinc oxide films produced by atomic layer deposition were investigated for use as anodes in organic light emitting diode (OLED) devices. Al-doped ZnO (AZO) films (∼200 nm thick) were deposited at temperatures of 200, 230, and 260 °C and the AZO film deposited at 260 °C demonstrated carrier mobility, carrier concentration, resistivity, and transmittance values of 16.2 cm2V-1s-1, 5.18 × 1020 cm-3, 7.34 × 10-4 Ωcm, and 90%, respectively. OLED devices with a DNTPD/TAPC/Bebq2:10% doped RP-411/Bphen/LiF/Al structure on a glass substrate fabricated using an AZO anode formed at 260 °C showed turn-on voltage, maximum luminance, and current efficiency values of 5.3 V, 16680 cd/m2, and 4.8 cd/A, respectively.
UR - https://www.scopus.com/pages/publications/84871861887
U2 - 10.1116/1.4738749
DO - 10.1116/1.4738749
M3 - Article
AN - SCOPUS:84871861887
SN - 0734-2101
VL - 31
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IS - 1
M1 - 01A101
ER -