Air stable and low temperature evaporable Li3N as a n type dopant in organic light-emitting diodes

Kyoung Soo Yook; Soon Ok Jeon; Chul Woong Joo; Jun Yeob Lee; Tae Woo Lee; Taeyong Noh; Haa Jin Yang; Sung Kee Kang

doi:10.1016/j.synthmet.2009.05.006

Air stable and low temperature evaporable Li₃N as a n type dopant in organic light-emitting diodes

Kyoung Soo Yook, Soon Ok Jeon, Chul Woong Joo, Jun Yeob Lee, Tae Woo Lee, Taeyong Noh, Haa Jin Yang, Sung Kee Kang

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

N doped organic light-emitting diodes were developed by using Li₃N as a n type dopant in electron transport layer. Driving voltage was greatly lowered by using Li₃N doped electron transport layer and combination of MoO₃ doped hole transport layer with Li₃N doped electron transport layer gave high quantum efficiency of 15% and low driving voltage of 4 V at 1000 cd/m² in green phosphorescent organic light-emitting diodes. Decomposition of Li₃N during evaporation into Li and N₂ was found to be responsible for n doping effect of Li₃N.

Original language	English
Pages (from-to)	1664-1666
Number of pages	3
Journal	Synthetic Metals
Volume	159
Issue number	15-16
DOIs	https://doi.org/10.1016/j.synthmet.2009.05.006
State	Published - Aug 2009
Externally published	Yes

Keywords

High efficiency
LiN
Low driving voltage
n doping

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.synthmet.2009.05.006

Cite this

@article{6052fb911b164d51bc6fe2bb281bba2f,

title = "Air stable and low temperature evaporable Li3N as a n type dopant in organic light-emitting diodes",

abstract = "N doped organic light-emitting diodes were developed by using Li3N as a n type dopant in electron transport layer. Driving voltage was greatly lowered by using Li3N doped electron transport layer and combination of MoO3 doped hole transport layer with Li3N doped electron transport layer gave high quantum efficiency of 15\% and low driving voltage of 4 V at 1000 cd/m2 in green phosphorescent organic light-emitting diodes. Decomposition of Li3N during evaporation into Li and N2 was found to be responsible for n doping effect of Li3N.",

keywords = "High efficiency, LiN, Low driving voltage, n doping",

author = "Yook, \{Kyoung Soo\} and Jeon, \{Soon Ok\} and Joo, \{Chul Woong\} and Lee, \{Jun Yeob\} and Lee, \{Tae Woo\} and Taeyong Noh and Yang, \{Haa Jin\} and Kang, \{Sung Kee\}",

year = "2009",

month = aug,

doi = "10.1016/j.synthmet.2009.05.006",

language = "English",

volume = "159",

pages = "1664--1666",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier B.V.",

number = "15-16",

}

TY - JOUR

T1 - Air stable and low temperature evaporable Li3N as a n type dopant in organic light-emitting diodes

AU - Yook, Kyoung Soo

AU - Jeon, Soon Ok

AU - Joo, Chul Woong

AU - Lee, Jun Yeob

AU - Lee, Tae Woo

AU - Noh, Taeyong

AU - Yang, Haa Jin

AU - Kang, Sung Kee

PY - 2009/8

Y1 - 2009/8

N2 - N doped organic light-emitting diodes were developed by using Li3N as a n type dopant in electron transport layer. Driving voltage was greatly lowered by using Li3N doped electron transport layer and combination of MoO3 doped hole transport layer with Li3N doped electron transport layer gave high quantum efficiency of 15% and low driving voltage of 4 V at 1000 cd/m2 in green phosphorescent organic light-emitting diodes. Decomposition of Li3N during evaporation into Li and N2 was found to be responsible for n doping effect of Li3N.

AB - N doped organic light-emitting diodes were developed by using Li3N as a n type dopant in electron transport layer. Driving voltage was greatly lowered by using Li3N doped electron transport layer and combination of MoO3 doped hole transport layer with Li3N doped electron transport layer gave high quantum efficiency of 15% and low driving voltage of 4 V at 1000 cd/m2 in green phosphorescent organic light-emitting diodes. Decomposition of Li3N during evaporation into Li and N2 was found to be responsible for n doping effect of Li3N.

KW - High efficiency

KW - LiN

KW - Low driving voltage

KW - n doping

UR - https://www.scopus.com/pages/publications/67651113835

U2 - 10.1016/j.synthmet.2009.05.006

DO - 10.1016/j.synthmet.2009.05.006

M3 - Article

AN - SCOPUS:67651113835

SN - 0379-6779

VL - 159

SP - 1664

EP - 1666

JO - Synthetic Metals

JF - Synthetic Metals

IS - 15-16

ER -