Abstract
Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for ITO/Alq3/LiF/Al device structure. The admittance spectroscopic analysis of the devices with LiF layer shows reduction in contact resistance (RC), parallel resistance (RP) and increment in parallel capacitance (CP).
| Original language | English |
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| Pages (from-to) | 1014-1017 |
| Number of pages | 4 |
| Journal | Proceedings of International Meeting on Information Display |
| Volume | 2006 |
| State | Published - 2006 |
| Event | IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of Duration: 22 Aug 2006 → 25 Aug 2006 |