Active and passive RF device compact modeling in CMOS technoloies

Hyungcheol Shin; In Man Kang; Jong Wook Jeon; Joonho Gil

doi:10.1109/SISPAD.2006.282828

Active and passive RF device compact modeling in CMOS technoloies

Hyungcheol Shin
, In Man Kang
, Jong Wook Jeon
, Joonho Gil

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

A new method for extracting π-type substrate resistance model of RF MOSFETs based on 3-port measurement is presented. Using NQS and macro-model with extracted substrate components, it is verified that the new substrate resistance model is accurate. Also, temperature dependent macro model is developed. An analytical high frequency thermal noise model for short-channel MOSFETs which covers all operating regions is developed. A simple wide-band model for on-chip inductors on silicon is presented. Finally, an RF model of an accumulation-mode MOS varactor is presented.

Original language	English
Title of host publication	2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	17-22
Number of pages	6
ISBN (Print)	1424404045, 9781424404049
DOIs	https://doi.org/10.1109/SISPAD.2006.282828
State	Published - 2006
Externally published	Yes
Event	2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 - Monterey, CA, United States Duration: 6 Sep 2006 → 8 Sep 2006

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06
Country/Territory	United States
City	Monterey, CA
Period	6/09/06 → 8/09/06

Keywords

Analytical thermal noise modeling
Macro-modeling
Non-quasi-static effect
RF MOSFET modeling
Substrate resistance
Three-port measurement

Access to Document

10.1109/SISPAD.2006.282828

Cite this

Shin, H., Kang, I. M., Jeon, J. W., & Gil, J. (2006). Active and passive RF device compact modeling in CMOS technoloies. In 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 (pp. 17-22). Article 4061571 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2006.282828

Shin, Hyungcheol ; Kang, In Man ; Jeon, Jong Wook et al. / Active and passive RF device compact modeling in CMOS technoloies. 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06. Institute of Electrical and Electronics Engineers Inc., 2006. pp. 17-22 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{8adae4636da1441181b4c9c3e80dfcb4,

title = "Active and passive RF device compact modeling in CMOS technoloies",

abstract = "A new method for extracting π-type substrate resistance model of RF MOSFETs based on 3-port measurement is presented. Using NQS and macro-model with extracted substrate components, it is verified that the new substrate resistance model is accurate. Also, temperature dependent macro model is developed. An analytical high frequency thermal noise model for short-channel MOSFETs which covers all operating regions is developed. A simple wide-band model for on-chip inductors on silicon is presented. Finally, an RF model of an accumulation-mode MOS varactor is presented.",

keywords = "Analytical thermal noise modeling, Macro-modeling, Non-quasi-static effect, RF MOSFET modeling, Substrate resistance, Three-port measurement",

author = "Hyungcheol Shin and Kang, \{In Man\} and Jeon, \{Jong Wook\} and Joonho Gil",

year = "2006",

doi = "10.1109/SISPAD.2006.282828",

language = "English",

isbn = "1424404045",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "17--22",

booktitle = "2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06",

note = "2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 ; Conference date: 06-09-2006 Through 08-09-2006",

}

Shin, H, Kang, IM, Jeon, JW & Gil, J 2006, Active and passive RF device compact modeling in CMOS technoloies. in 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06., 4061571, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., pp. 17-22, 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06, Monterey, CA, United States, 6/09/06. https://doi.org/10.1109/SISPAD.2006.282828

Active and passive RF device compact modeling in CMOS technoloies. / Shin, Hyungcheol; Kang, In Man; Jeon, Jong Wook et al.
2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06. Institute of Electrical and Electronics Engineers Inc., 2006. p. 17-22 4061571 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Active and passive RF device compact modeling in CMOS technoloies

AU - Shin, Hyungcheol

AU - Kang, In Man

AU - Jeon, Jong Wook

AU - Gil, Joonho

PY - 2006

Y1 - 2006

N2 - A new method for extracting π-type substrate resistance model of RF MOSFETs based on 3-port measurement is presented. Using NQS and macro-model with extracted substrate components, it is verified that the new substrate resistance model is accurate. Also, temperature dependent macro model is developed. An analytical high frequency thermal noise model for short-channel MOSFETs which covers all operating regions is developed. A simple wide-band model for on-chip inductors on silicon is presented. Finally, an RF model of an accumulation-mode MOS varactor is presented.

AB - A new method for extracting π-type substrate resistance model of RF MOSFETs based on 3-port measurement is presented. Using NQS and macro-model with extracted substrate components, it is verified that the new substrate resistance model is accurate. Also, temperature dependent macro model is developed. An analytical high frequency thermal noise model for short-channel MOSFETs which covers all operating regions is developed. A simple wide-band model for on-chip inductors on silicon is presented. Finally, an RF model of an accumulation-mode MOS varactor is presented.

KW - Analytical thermal noise modeling

KW - Macro-modeling

KW - Non-quasi-static effect

KW - RF MOSFET modeling

KW - Substrate resistance

KW - Three-port measurement

UR - https://www.scopus.com/pages/publications/42549088704

U2 - 10.1109/SISPAD.2006.282828

DO - 10.1109/SISPAD.2006.282828

M3 - Conference contribution

AN - SCOPUS:42549088704

SN - 1424404045

SN - 9781424404049

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 17

EP - 22

BT - 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06

Y2 - 6 September 2006 through 8 September 2006

ER -

Shin H, Kang IM, Jeon JW, Gil J. Active and passive RF device compact modeling in CMOS technoloies. In 2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06. Institute of Electrical and Electronics Engineers Inc. 2006. p. 17-22. 4061571. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2006.282828

Active and passive RF device compact modeling in CMOS technoloies

Abstract

Publication series

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Keywords

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