Achievement of a high channel strain via dry oxidation of recessed source/drain Si_1-x Ge_x structures

This study proposes a method of acquiring a high channel strain by locally oxidizing recessed Si_1-x Ge_x source/drain structures and forming a Ge condensation layer as an effective stressor. Combination of several transmission electron microscopy characterization techniques including nanobeam diffraction allowed us to analyze the thickness and composition of the Ge condensation layer formed upon oxidation, and the evolution of the channel strain. Nanobeam diffraction results demonstrate that this method can be critically used to effectively increase the channel strain.