TY - JOUR
T1 - Abatement of perfluorocompounds (PFC's) in a microwave tubular reactor using O2 as an additive gas
AU - Mohindra, Vivek
AU - Chae, Heeyeop
AU - Sawin, Herbert H.
AU - Mocella, Michael T.
PY - 1997
Y1 - 1997
N2 - This paper discusses the abatement of four perfluorocompounds (PFC's) in a microwave tubular reactor - C2F6, CF4, SF6, and CHF3. The abatement was carried out using O2 as an additive gas, and was studied as a function of O2:PFC ratio, flowrate, power and pressure. Near 100% abatement was achieved for all the PFC's investigated. A detailed characterization of C2F6 abatement using GC, GC/MS, and inline Mass Spectrometer showed the major abatement products to be CO2, COF2, and F2. The parameteric dependence of CF4, SF6, and CHF3 abatement was also characterized experimentally. The major products from CF4 abatement were similar to those from C2F6 abatement. Mass Spectroscopy indicated the main products for SF6 abatement were SO2F2, SO2, and F2 while those for CHF3 were CO2, COF2, F2, and HF. Additional experiments indicate that the microwave abatement unit can be successfully used to abate these PFC's in the Integrated Circuit fabrication facilities.
AB - This paper discusses the abatement of four perfluorocompounds (PFC's) in a microwave tubular reactor - C2F6, CF4, SF6, and CHF3. The abatement was carried out using O2 as an additive gas, and was studied as a function of O2:PFC ratio, flowrate, power and pressure. Near 100% abatement was achieved for all the PFC's investigated. A detailed characterization of C2F6 abatement using GC, GC/MS, and inline Mass Spectrometer showed the major abatement products to be CO2, COF2, and F2. The parameteric dependence of CF4, SF6, and CHF3 abatement was also characterized experimentally. The major products from CF4 abatement were similar to those from C2F6 abatement. Mass Spectroscopy indicated the main products for SF6 abatement were SO2F2, SO2, and F2 while those for CHF3 were CO2, COF2, F2, and HF. Additional experiments indicate that the microwave abatement unit can be successfully used to abate these PFC's in the Integrated Circuit fabrication facilities.
UR - https://www.scopus.com/pages/publications/0031198458
U2 - 10.1109/66.618213
DO - 10.1109/66.618213
M3 - Article
AN - SCOPUS:0031198458
SN - 0894-6507
VL - 10
SP - 399
EP - 411
JO - IEEE Transactions on Semiconductor Manufacturing
JF - IEEE Transactions on Semiconductor Manufacturing
IS - 3
ER -