A ZnO/N-doped carbon nanotube nanocomposite charge transport layer for high performance optoelectronics

Metal oxide charge transport layers are widely used to promote the interfacial charge transport of organic optoelectronics. Nevertheless, frequently used wide-bandgap metal oxides with low electrical conductivities reveal inherent limitations in the charge transport enhancement. We present the remarkable electro-conductivity enhancement of solution processable ZnO charge transport layers upon dispersing a tiny amount (less than 0.1 wt%) of chemically doped CNTs and the corresponding device performance improvement of light-emitting diodes (OLEDs). Using various undoped or doped CNTs, whose work function was systematically tuned by substitutional doping of electron deficient B or electron rich N,N-doped CNT (N-CNT), the composite showed a lowered work function matching well with the conduction band of ZnO. Consequently, the ZnO/N-CNT nanocomposite transport layer with 0.08 wt% N-CNT showed a five-fold enhancement of electron mobility, while maintaining the intrinsic bandgap energy levels, optical transparency and solution processability of pure ZnO. The inverted OLEDs employing ZnO/N-CNT nanocomposite electron transport layers could facilitate well-balanced electron-hole injection and, thus, more than two-fold enhancement of maximum luminance (from 21000 cd m ^-2 at 14.6 V to 46100 cd m ^-2 at 14.0 V) and efficiency (from 6.9 cd A ^-1 at 13.4 V to 14.3 cd A ^-1 at 13.6 V). This highly effective charge mobility enhancement enabled by work function tunable, chemically doped CNTs would be beneficial for various organic and inorganic charge transport materials with different energy levels.