A Van der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2

Youngjo Jin; Dong Hoon Keum; Sung Jin An; Joonggyu Kim; Hyun Seok Lee; Young Hee Lee

doi:10.1002/adma.201502278

A Van der Waals Homojunction: Ideal p-n Diode Behavior in MoSe₂

Youngjo Jin
, Dong Hoon Keum
, Sung Jin An
, Joonggyu Kim
, Hyun Seok Lee
, Young Hee Lee

Department of Physics

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

238 Scopus citations

Abstract

A MoSe₂ p-n diode with a van der Waals homojunction is demonstrated by stacking undoped (n-type) and Nb-doped (p-type) semiconducting MoSe₂ synthesized by chemical vapor transport for Nb substitutional doping. The p-n diode reveals an ideality factor of ≈1.0 and a high external quantum efficiency (≈52%), which increases in response to light intensity due to the negligible recombination rate at the clean homojunction interface.

Original language	English
Pages (from-to)	5534-5540
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	37
DOIs	https://doi.org/10.1002/adma.201502278
State	Published - 1 Oct 2015

Keywords

elemental doping
p-n diodes
p-type MoSe
transition metal dichalcogenides
van der Waals homojunction

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10.1002/adma.201502278

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title = "A Van der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2",

abstract = "A MoSe2 p-n diode with a van der Waals homojunction is demonstrated by stacking undoped (n-type) and Nb-doped (p-type) semiconducting MoSe2 synthesized by chemical vapor transport for Nb substitutional doping. The p-n diode reveals an ideality factor of ≈1.0 and a high external quantum efficiency (≈52\%), which increases in response to light intensity due to the negligible recombination rate at the clean homojunction interface.",

keywords = "elemental doping, p-n diodes, p-type MoSe, transition metal dichalcogenides, van der Waals homojunction",

author = "Youngjo Jin and Keum, \{Dong Hoon\} and An, \{Sung Jin\} and Joonggyu Kim and Lee, \{Hyun Seok\} and Lee, \{Young Hee\}",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2015",

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doi = "10.1002/adma.201502278",

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T1 - A Van der Waals Homojunction

T2 - Ideal p-n Diode Behavior in MoSe2

AU - Jin, Youngjo

AU - Keum, Dong Hoon

AU - An, Sung Jin

AU - Kim, Joonggyu

AU - Lee, Hyun Seok

AU - Lee, Young Hee

PY - 2015/10/1

Y1 - 2015/10/1

N2 - A MoSe2 p-n diode with a van der Waals homojunction is demonstrated by stacking undoped (n-type) and Nb-doped (p-type) semiconducting MoSe2 synthesized by chemical vapor transport for Nb substitutional doping. The p-n diode reveals an ideality factor of ≈1.0 and a high external quantum efficiency (≈52%), which increases in response to light intensity due to the negligible recombination rate at the clean homojunction interface.

AB - A MoSe2 p-n diode with a van der Waals homojunction is demonstrated by stacking undoped (n-type) and Nb-doped (p-type) semiconducting MoSe2 synthesized by chemical vapor transport for Nb substitutional doping. The p-n diode reveals an ideality factor of ≈1.0 and a high external quantum efficiency (≈52%), which increases in response to light intensity due to the negligible recombination rate at the clean homojunction interface.

KW - elemental doping

KW - p-n diodes

KW - p-type MoSe

KW - transition metal dichalcogenides

KW - van der Waals homojunction

UR - https://www.scopus.com/pages/publications/84942824398

U2 - 10.1002/adma.201502278

DO - 10.1002/adma.201502278

M3 - Article

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SN - 0935-9648

VL - 27

SP - 5534

EP - 5540

JO - Advanced Materials

JF - Advanced Materials

IS - 37

ER -

A Van der Waals Homojunction: Ideal p-n Diode Behavior in MoSe₂

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Keywords

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