A sub-threshold ultra-low power low-dropout regulator

Truong Van Cong Thuong; Young Jun Park; Truong Thi Kim Nga; Kang Yoon Lee

doi:10.1109/ISOCC.2017.8368859

A sub-threshold ultra-low power low-dropout regulator

Truong Van Cong Thuong
, Young Jun Park
, Truong Thi Kim Nga
, Kang Yoon Lee

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, a wide range low dropout (LDO) with low current consumption is presented. The circuitry is constructed by a sub-threshold voltage error amplifier (EA). The transistors of EA operate in the sub-threshold region, which allows a remarkable reduction in the minimum supply voltage and current consumption. In the condition of input voltage 2 ∼ 5V, output voltage 1.8 V, load capacitor 4.7μF, and load current 100 mA, the current consumption of the LDO is 3.6 μA. The output LDO can be adjusted from 1.6 V to 2.15 V by the 4 bit trimming step of 50 mV. The propose LDO is implement in CMOS 110 nm technology using UMC's process with the active die size of 222 μm × 184 μm.

Original language	English
Title of host publication	Proceedings - International SoC Design Conference 2017, ISOCC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	214-215
Number of pages	2
ISBN (Electronic)	9781538622858
DOIs	https://doi.org/10.1109/ISOCC.2017.8368859
State	Published - 29 May 2018
Event	14th International SoC Design Conference, ISOCC 2017 - Seoul, Korea, Republic of Duration: 5 Nov 2017 → 8 Nov 2017

Publication series

Name	Proceedings - International SoC Design Conference 2017, ISOCC 2017

Conference

Conference	14th International SoC Design Conference, ISOCC 2017
Country/Territory	Korea, Republic of
City	Seoul
Period	5/11/17 → 8/11/17

Keywords

Low-Dropout Regulator
Low-power LDO
Sub-threshold voltage

Access to Document

10.1109/ISOCC.2017.8368859

Cite this

Van Cong Thuong, T., Park, Y. J., Nga, T. T. K., & Lee, K. Y. (2018). A sub-threshold ultra-low power low-dropout regulator. In Proceedings - International SoC Design Conference 2017, ISOCC 2017 (pp. 214-215). (Proceedings - International SoC Design Conference 2017, ISOCC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISOCC.2017.8368859

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title = "A sub-threshold ultra-low power low-dropout regulator",

abstract = "In this paper, a wide range low dropout (LDO) with low current consumption is presented. The circuitry is constructed by a sub-threshold voltage error amplifier (EA). The transistors of EA operate in the sub-threshold region, which allows a remarkable reduction in the minimum supply voltage and current consumption. In the condition of input voltage 2 ∼ 5V, output voltage 1.8 V, load capacitor 4.7μF, and load current 100 mA, the current consumption of the LDO is 3.6 μA. The output LDO can be adjusted from 1.6 V to 2.15 V by the 4 bit trimming step of 50 mV. The propose LDO is implement in CMOS 110 nm technology using UMC's process with the active die size of 222 μm × 184 μm.",

keywords = "Low-Dropout Regulator, Low-power LDO, Sub-threshold voltage",

author = "\{Van Cong Thuong\}, Truong and Park, \{Young Jun\} and Nga, \{Truong Thi Kim\} and Lee, \{Kang Yoon\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 14th International SoC Design Conference, ISOCC 2017 ; Conference date: 05-11-2017 Through 08-11-2017",

year = "2018",

month = may,

day = "29",

doi = "10.1109/ISOCC.2017.8368859",

language = "English",

series = "Proceedings - International SoC Design Conference 2017, ISOCC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Van Cong Thuong, T, Park, YJ, Nga, TTK & Lee, KY 2018, A sub-threshold ultra-low power low-dropout regulator. in Proceedings - International SoC Design Conference 2017, ISOCC 2017. Proceedings - International SoC Design Conference 2017, ISOCC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 214-215, 14th International SoC Design Conference, ISOCC 2017, Seoul, Korea, Republic of, 5/11/17. https://doi.org/10.1109/ISOCC.2017.8368859

A sub-threshold ultra-low power low-dropout regulator. / Van Cong Thuong, Truong; Park, Young Jun; Nga, Truong Thi Kim et al.
Proceedings - International SoC Design Conference 2017, ISOCC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 214-215 (Proceedings - International SoC Design Conference 2017, ISOCC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A sub-threshold ultra-low power low-dropout regulator

AU - Van Cong Thuong, Truong

AU - Park, Young Jun

AU - Nga, Truong Thi Kim

AU - Lee, Kang Yoon

PY - 2018/5/29

Y1 - 2018/5/29

N2 - In this paper, a wide range low dropout (LDO) with low current consumption is presented. The circuitry is constructed by a sub-threshold voltage error amplifier (EA). The transistors of EA operate in the sub-threshold region, which allows a remarkable reduction in the minimum supply voltage and current consumption. In the condition of input voltage 2 ∼ 5V, output voltage 1.8 V, load capacitor 4.7μF, and load current 100 mA, the current consumption of the LDO is 3.6 μA. The output LDO can be adjusted from 1.6 V to 2.15 V by the 4 bit trimming step of 50 mV. The propose LDO is implement in CMOS 110 nm technology using UMC's process with the active die size of 222 μm × 184 μm.

AB - In this paper, a wide range low dropout (LDO) with low current consumption is presented. The circuitry is constructed by a sub-threshold voltage error amplifier (EA). The transistors of EA operate in the sub-threshold region, which allows a remarkable reduction in the minimum supply voltage and current consumption. In the condition of input voltage 2 ∼ 5V, output voltage 1.8 V, load capacitor 4.7μF, and load current 100 mA, the current consumption of the LDO is 3.6 μA. The output LDO can be adjusted from 1.6 V to 2.15 V by the 4 bit trimming step of 50 mV. The propose LDO is implement in CMOS 110 nm technology using UMC's process with the active die size of 222 μm × 184 μm.

KW - Low-Dropout Regulator

KW - Low-power LDO

KW - Sub-threshold voltage

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U2 - 10.1109/ISOCC.2017.8368859

DO - 10.1109/ISOCC.2017.8368859

M3 - Conference contribution

AN - SCOPUS:85048881177

T3 - Proceedings - International SoC Design Conference 2017, ISOCC 2017

SP - 214

EP - 215

BT - Proceedings - International SoC Design Conference 2017, ISOCC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 14th International SoC Design Conference, ISOCC 2017

Y2 - 5 November 2017 through 8 November 2017

ER -

A sub-threshold ultra-low power low-dropout regulator

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