A Study on the Performance Enhancement of Resistive Random Access Memory Devices Using p-Type Oxide Semiconductors

This study focuses on the performance optimization of Resistive Random Access Memory (RRAM) devices using Sb-and Pb-doped p-Type Cu20 thin films as active layers. The films were fabricated via electrochemical deposition on ITO conductive substrates as bottom electrode, and the effects of doping concentration, film thickness, and applied voltage on device characteristics were systematically investigated. To evaluate the influence of doping, undoped Cu20 with a thickness of 500 nm was used as a reference sample, and the doping concentrations of Sb and Pb were varied from 0 to 5 mM. X-ray diffraction (XRD) analysis confirmed crystallographic changes induced by metal doping, and current-voltage measurements were used to identify optimal conditions for low-power operation and improved on/off ratios. These findings provide meaningful insights into the material engineering of p-Type Cu20 for the development of high-performance RRAM devices.