TY - GEN
T1 - A Study on the Performance Enhancement of Resistive Random Access Memory Devices Using p-Type Oxide Semiconductors
AU - Park, Hayun
AU - Kang, Dayun
AU - Huh, Kyung Jun
AU - Oh, Eun Seo
AU - Yoon, Sun Wook
AU - Lee, Kun Woong
AU - Cho, Hyung Koun
N1 - Publisher Copyright:
© 2025 International Society of Functional Thin Film Materials & Devices (FTFMD).
PY - 2025
Y1 - 2025
N2 - This study focuses on the performance optimization of Resistive Random Access Memory (RRAM) devices using Sb-and Pb-doped p-Type Cu20 thin films as active layers. The films were fabricated via electrochemical deposition on ITO conductive substrates as bottom electrode, and the effects of doping concentration, film thickness, and applied voltage on device characteristics were systematically investigated. To evaluate the influence of doping, undoped Cu20 with a thickness of 500 nm was used as a reference sample, and the doping concentrations of Sb and Pb were varied from 0 to 5 mM. X-ray diffraction (XRD) analysis confirmed crystallographic changes induced by metal doping, and current-voltage measurements were used to identify optimal conditions for low-power operation and improved on/off ratios. These findings provide meaningful insights into the material engineering of p-Type Cu20 for the development of high-performance RRAM devices.
AB - This study focuses on the performance optimization of Resistive Random Access Memory (RRAM) devices using Sb-and Pb-doped p-Type Cu20 thin films as active layers. The films were fabricated via electrochemical deposition on ITO conductive substrates as bottom electrode, and the effects of doping concentration, film thickness, and applied voltage on device characteristics were systematically investigated. To evaluate the influence of doping, undoped Cu20 with a thickness of 500 nm was used as a reference sample, and the doping concentrations of Sb and Pb were varied from 0 to 5 mM. X-ray diffraction (XRD) analysis confirmed crystallographic changes induced by metal doping, and current-voltage measurements were used to identify optimal conditions for low-power operation and improved on/off ratios. These findings provide meaningful insights into the material engineering of p-Type Cu20 for the development of high-performance RRAM devices.
UR - https://www.scopus.com/pages/publications/105015442504
U2 - 10.23919/AM-FPD66451.2025.11110602
DO - 10.23919/AM-FPD66451.2025.11110602
M3 - Conference contribution
AN - SCOPUS:105015442504
T3 - Proceedings of AM-FPD 2025 - 2025 32nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials
SP - 129
EP - 132
BT - Proceedings of AM-FPD 2025 - 2025 32nd International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 32nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2025
Y2 - 1 July 2025 through 4 July 2025
ER -
