A study on the characteristics of TiOxNy thin films with various nitrogen flow rate by PECVD method

S. J. Cho; C. K. Jung; J. H. Boo

doi:10.1016/j.cap.2012.05.037

A study on the characteristics of TiOxNy thin films with various nitrogen flow rate by PECVD method

S. J. Cho, C. K. Jung, J. H. Boo

Department of Chemistry

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

TiOxNy thin films were deposited on Si(100) substrates at 500°C using RF PECVD system. Titanium isopropoxide was used as precursor with different nitrogen flow rate to control nitrogen contents in the films. Changes of chemical states of constituent elements in the deposited films were examined by X-ray photoelectron spectroscopy (XPS) analysis. The data showed that the nitrogen content ratio was increased with increasing nitrogen flow rate, also the binding energy shift toward high energy side. The characteristics of film growth orientation and structure as well as morphology were also analyzed by X-ray diffraction (XRD), transmission electron diffraction (TED), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). The film growth orientation, structure, and morphology were changed by increasing nitrogen flow rate. Nano-indentation experiments showed strong dependency on the composition of nitrogen and nano-structure in the hardness range of between 8 and 16 GPa.

Original language	English
Pages (from-to)	S29-S34
Journal	Current Applied Physics
Volume	12
Issue number	SUPPL.4
DOIs	https://doi.org/10.1016/j.cap.2012.05.037
State	Published - 20 Dec 2012

Keywords

Hardness
Radio frequency PECVD
Structural property
TiOxNy thin film

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10.1016/j.cap.2012.05.037

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@article{200269e815a5473bb271ced514c7cb8e,

title = "A study on the characteristics of TiOxNy thin films with various nitrogen flow rate by PECVD method",

abstract = "TiOxNy thin films were deposited on Si(100) substrates at 500°C using RF PECVD system. Titanium isopropoxide was used as precursor with different nitrogen flow rate to control nitrogen contents in the films. Changes of chemical states of constituent elements in the deposited films were examined by X-ray photoelectron spectroscopy (XPS) analysis. The data showed that the nitrogen content ratio was increased with increasing nitrogen flow rate, also the binding energy shift toward high energy side. The characteristics of film growth orientation and structure as well as morphology were also analyzed by X-ray diffraction (XRD), transmission electron diffraction (TED), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). The film growth orientation, structure, and morphology were changed by increasing nitrogen flow rate. Nano-indentation experiments showed strong dependency on the composition of nitrogen and nano-structure in the hardness range of between 8 and 16 GPa.",

keywords = "Hardness, Radio frequency PECVD, Structural property, TiOxNy thin film",

author = "Cho, \{S. J.\} and Jung, \{C. K.\} and Boo, \{J. H.\}",

year = "2012",

month = dec,

day = "20",

doi = "10.1016/j.cap.2012.05.037",

language = "English",

volume = "12",

pages = "S29--S34",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "SUPPL.4",

}

TY - JOUR

T1 - A study on the characteristics of TiOxNy thin films with various nitrogen flow rate by PECVD method

AU - Cho, S. J.

AU - Jung, C. K.

AU - Boo, J. H.

PY - 2012/12/20

Y1 - 2012/12/20

N2 - TiOxNy thin films were deposited on Si(100) substrates at 500°C using RF PECVD system. Titanium isopropoxide was used as precursor with different nitrogen flow rate to control nitrogen contents in the films. Changes of chemical states of constituent elements in the deposited films were examined by X-ray photoelectron spectroscopy (XPS) analysis. The data showed that the nitrogen content ratio was increased with increasing nitrogen flow rate, also the binding energy shift toward high energy side. The characteristics of film growth orientation and structure as well as morphology were also analyzed by X-ray diffraction (XRD), transmission electron diffraction (TED), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). The film growth orientation, structure, and morphology were changed by increasing nitrogen flow rate. Nano-indentation experiments showed strong dependency on the composition of nitrogen and nano-structure in the hardness range of between 8 and 16 GPa.

AB - TiOxNy thin films were deposited on Si(100) substrates at 500°C using RF PECVD system. Titanium isopropoxide was used as precursor with different nitrogen flow rate to control nitrogen contents in the films. Changes of chemical states of constituent elements in the deposited films were examined by X-ray photoelectron spectroscopy (XPS) analysis. The data showed that the nitrogen content ratio was increased with increasing nitrogen flow rate, also the binding energy shift toward high energy side. The characteristics of film growth orientation and structure as well as morphology were also analyzed by X-ray diffraction (XRD), transmission electron diffraction (TED), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). The film growth orientation, structure, and morphology were changed by increasing nitrogen flow rate. Nano-indentation experiments showed strong dependency on the composition of nitrogen and nano-structure in the hardness range of between 8 and 16 GPa.

KW - Hardness

KW - Radio frequency PECVD

KW - Structural property

KW - TiOxNy thin film

UR - https://www.scopus.com/pages/publications/84871926796

U2 - 10.1016/j.cap.2012.05.037

DO - 10.1016/j.cap.2012.05.037

M3 - Article

AN - SCOPUS:84871926796

SN - 1567-1739

VL - 12

SP - S29-S34

JO - Current Applied Physics

JF - Current Applied Physics

IS - SUPPL.4

ER -

A study on the characteristics of TiOxNy thin films with various nitrogen flow rate by PECVD method

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Keywords

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