A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors

Seokil Kwon; Byoungseon Choi; Hyung Suk Kuh; Hyunae Park; Byoungdeok Choi

doi:10.1109/IPFA.2011.5992715

A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors

Seokil Kwon
, Byoungseon Choi
, Hyung Suk Kuh
, Hyunae Park
, Byoungdeok Choi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, we extract the off-state current component from the asymmetric transistors in short channel 40nm DRAM. Through a quantitative comparison of λ(DIBL coefficient), we explained by differences in deep high doped drain(nλ=0.1576) and shallow low doped drain(nλ=0.0168) of off-stat current.

Original language	English
Title of host publication	18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011
DOIs	https://doi.org/10.1109/IPFA.2011.5992715
State	Published - 2011
Event	18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 - Incheon, Korea, Republic of Duration: 4 Jul 2011 → 7 Jul 2011

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011
Country/Territory	Korea, Republic of
City	Incheon
Period	4/07/11 → 7/07/11

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10.1109/IPFA.2011.5992715

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Kwon, S., Choi, B., Kuh, H. S., Park, H., & Choi, B. (2011). A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors. In 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 Article 5992715 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2011.5992715

Kwon, Seokil ; Choi, Byoungseon ; Kuh, Hyung Suk et al. / A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors. 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011. 2011. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{faa7ec8b30be43a8ae45dab48689af88,

title = "A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors",

abstract = "In this study, we extract the off-state current component from the asymmetric transistors in short channel 40nm DRAM. Through a quantitative comparison of λ(DIBL coefficient), we explained by differences in deep high doped drain(nλ=0.1576) and shallow low doped drain(nλ=0.0168) of off-stat current.",

author = "Seokil Kwon and Byoungseon Choi and Kuh, \{Hyung Suk\} and Hyunae Park and Byoungdeok Choi",

year = "2011",

doi = "10.1109/IPFA.2011.5992715",

language = "English",

isbn = "9781457701597",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

booktitle = "18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011",

note = "18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011 ; Conference date: 04-07-2011 Through 07-07-2011",

}

Kwon, S, Choi, B, Kuh, HS, Park, H & Choi, B 2011, A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors. in 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011., 5992715, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011, Incheon, Korea, Republic of, 4/07/11. https://doi.org/10.1109/IPFA.2011.5992715

A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors. / Kwon, Seokil; Choi, Byoungseon; Kuh, Hyung Suk et al.
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011. 2011. 5992715 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors

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AU - Choi, Byoungseon

AU - Kuh, Hyung Suk

AU - Park, Hyunae

AU - Choi, Byoungdeok

PY - 2011

Y1 - 2011

N2 - In this study, we extract the off-state current component from the asymmetric transistors in short channel 40nm DRAM. Through a quantitative comparison of λ(DIBL coefficient), we explained by differences in deep high doped drain(nλ=0.1576) and shallow low doped drain(nλ=0.0168) of off-stat current.

AB - In this study, we extract the off-state current component from the asymmetric transistors in short channel 40nm DRAM. Through a quantitative comparison of λ(DIBL coefficient), we explained by differences in deep high doped drain(nλ=0.1576) and shallow low doped drain(nλ=0.0168) of off-stat current.

UR - https://www.scopus.com/pages/publications/80052608913

U2 - 10.1109/IPFA.2011.5992715

DO - 10.1109/IPFA.2011.5992715

M3 - Conference contribution

AN - SCOPUS:80052608913

SN - 9781457701597

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

BT - 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011

T2 - 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011

Y2 - 4 July 2011 through 7 July 2011

ER -

Kwon S, Choi B, Kuh HS, Park H, Choi B. A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors. In 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2011. 2011. 5992715. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2011.5992715

A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors

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