A study of tunnel recombination junction on a-Si:H/HIT tandem structure solar cell

Youngseok Lee, Dao Vinh Ai, Sangho Kim, Sangmyung Han, Heeseok Kim, Junsin Yi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Novel tandem solar cell structure a-Si:H/HIT has been developed. The fabrication of hetero structure tandem cell (HSTC) has been combined an hydrogenated amorphous silicon (a-Si:H) p-i-n thin film solar cell for a top cell and a heteroj unction with an intrinsic thin layer (HIT) type silicon solar cell for a bottom cell. Using the novel tandem structure, an open circuit voltage of 1.43 V has been obtained. A tunnel recombination junction (TRJ) quality of an amorphous silicon based tandem solar cell can have a significant impact on its performance. Therefore, it is important to understand the TRJ characteristics.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1361-1363
Number of pages3
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 16 Jun 201321 Jun 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL
Period16/06/1321/06/13

Keywords

  • Amorphous silicon
  • Hetero-junction
  • HIT
  • Tandem cell
  • Thin film
  • Tunnel recombination junction (TRJ)

Fingerprint

Dive into the research topics of 'A study of tunnel recombination junction on a-Si:H/HIT tandem structure solar cell'. Together they form a unique fingerprint.

Cite this