A study of transparent indium tin oxide (ITO) contact to p-GaN

D. W. Kim; Y. J. Sung; J. W. Park; G. Y. Yeom

doi:10.1016/S0040-6090(01)01368-2

A study of transparent indium tin oxide (ITO) contact to p-GaN

D. W. Kim
, Y. J. Sung
, J. W. Park
, G. Y. Yeom

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

89 Scopus citations

Abstract

In this study, indium tin oxide (ITO) thin film was evaporated on Mg-doped p-GaN layers with low 10¹⁷/cm³, grown by metalorganic chemical vapor deposition (MOCVD) on (0001) sapphire wafers, and its contact properties were investigated. The sheet resistance (R_S) of the evaporated ITO films was several kΩ/□ before the annealing but the sheet resistance decreased to 40-50 Ω/□ after the annealing in N₂ using a rapid thermal annealing (RTA) system. I-V characteristics and contact resistivities of the evaporated ITO on p-type GaN were investigated as a function of substrate treatment, annealing time, and annealing temperature. The results showed that, in optimized conditions, the ITO contacts with the resistance in the range of low 10^-1 Ω cm² could be obtained, and which is probably applicable as the ohmic contact for GaN-based light emitting diodes. Also, at these conditions, the measured optical transmittances of ITO film were above 90% at a wavelength of 420 nm (blue).

Original language	English
Pages (from-to)	87-92
Number of pages	6
Journal	Thin Solid Films
Volume	398-399
DOIs	https://doi.org/10.1016/S0040-6090(01)01368-2
State	Published - Nov 2001

Keywords

Indium tin oxide
P-GaN
Rapid thermal annealing (RTA) system
Transparent oxide contact

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10.1016/S0040-6090(01)01368-2

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title = "A study of transparent indium tin oxide (ITO) contact to p-GaN",

abstract = "In this study, indium tin oxide (ITO) thin film was evaporated on Mg-doped p-GaN layers with low 1017/cm3, grown by metalorganic chemical vapor deposition (MOCVD) on (0001) sapphire wafers, and its contact properties were investigated. The sheet resistance (RS) of the evaporated ITO films was several kΩ/□ before the annealing but the sheet resistance decreased to 40-50 Ω/□ after the annealing in N2 using a rapid thermal annealing (RTA) system. I-V characteristics and contact resistivities of the evaporated ITO on p-type GaN were investigated as a function of substrate treatment, annealing time, and annealing temperature. The results showed that, in optimized conditions, the ITO contacts with the resistance in the range of low 10-1 Ω cm2 could be obtained, and which is probably applicable as the ohmic contact for GaN-based light emitting diodes. Also, at these conditions, the measured optical transmittances of ITO film were above 90\% at a wavelength of 420 nm (blue).",

keywords = "Indium tin oxide, P-GaN, Rapid thermal annealing (RTA) system, Transparent oxide contact",

author = "Kim, \{D. W.\} and Sung, \{Y. J.\} and Park, \{J. W.\} and Yeom, \{G. Y.\}",

year = "2001",

month = nov,

doi = "10.1016/S0040-6090(01)01368-2",

language = "English",

volume = "398-399",

pages = "87--92",

journal = "Thin Solid Films",

issn = "0040-6090",

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TY - JOUR

T1 - A study of transparent indium tin oxide (ITO) contact to p-GaN

AU - Kim, D. W.

AU - Sung, Y. J.

AU - Park, J. W.

AU - Yeom, G. Y.

PY - 2001/11

Y1 - 2001/11

N2 - In this study, indium tin oxide (ITO) thin film was evaporated on Mg-doped p-GaN layers with low 1017/cm3, grown by metalorganic chemical vapor deposition (MOCVD) on (0001) sapphire wafers, and its contact properties were investigated. The sheet resistance (RS) of the evaporated ITO films was several kΩ/□ before the annealing but the sheet resistance decreased to 40-50 Ω/□ after the annealing in N2 using a rapid thermal annealing (RTA) system. I-V characteristics and contact resistivities of the evaporated ITO on p-type GaN were investigated as a function of substrate treatment, annealing time, and annealing temperature. The results showed that, in optimized conditions, the ITO contacts with the resistance in the range of low 10-1 Ω cm2 could be obtained, and which is probably applicable as the ohmic contact for GaN-based light emitting diodes. Also, at these conditions, the measured optical transmittances of ITO film were above 90% at a wavelength of 420 nm (blue).

AB - In this study, indium tin oxide (ITO) thin film was evaporated on Mg-doped p-GaN layers with low 1017/cm3, grown by metalorganic chemical vapor deposition (MOCVD) on (0001) sapphire wafers, and its contact properties were investigated. The sheet resistance (RS) of the evaporated ITO films was several kΩ/□ before the annealing but the sheet resistance decreased to 40-50 Ω/□ after the annealing in N2 using a rapid thermal annealing (RTA) system. I-V characteristics and contact resistivities of the evaporated ITO on p-type GaN were investigated as a function of substrate treatment, annealing time, and annealing temperature. The results showed that, in optimized conditions, the ITO contacts with the resistance in the range of low 10-1 Ω cm2 could be obtained, and which is probably applicable as the ohmic contact for GaN-based light emitting diodes. Also, at these conditions, the measured optical transmittances of ITO film were above 90% at a wavelength of 420 nm (blue).

KW - Indium tin oxide

KW - P-GaN

KW - Rapid thermal annealing (RTA) system

KW - Transparent oxide contact

UR - https://www.scopus.com/pages/publications/4944229040

U2 - 10.1016/S0040-6090(01)01368-2

DO - 10.1016/S0040-6090(01)01368-2

M3 - Article

AN - SCOPUS:4944229040

SN - 0040-6090

VL - 398-399

SP - 87

EP - 92

JO - Thin Solid Films

JF - Thin Solid Films

ER -

A study of transparent indium tin oxide (ITO) contact to p-GaN

Abstract

Keywords

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