A study of transparent contact to vertical GaN-based light-emitting diodes

D. W. Kim; H. Y. Lee; G. Y. Yeom; Y. J. Sung

doi:10.1063/1.2007850

A study of transparent contact to vertical GaN-based light-emitting diodes

D. W. Kim
, H. Y. Lee
, G. Y. Yeom
, Y. J. Sung

Sungkyunkwan University
Samsung

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

In this study, transparent indium tin oxide (ITO) deposited by sputtering was applied to laser lift-off (LLO) GaN-based vertical light-emitting diodes (VLEDs) and the electrical and optical properties of ITO films were measured as a function of annealing conditions. The measured minimum resistivity of ITO film was about 3.78× 10-4 × cm and the measured optical transmittance at 460 nm was 96.8% after the annealing process. In this condition, about 1× 10-5 × cm2 of ITO contact resistance to LLO n-GaN could be obtained. By applying the transparent ITO layer to the LLO GaN-based VLEDs, a significant decrease of the forward operating voltage from 3.3 to 3.8 V at 20 mA could be obtained.

Original language	English
Article number	053102
Journal	Journal of Applied Physics
Volume	98
Issue number	5
DOIs	https://doi.org/10.1063/1.2007850
State	Published - 1 Sep 2005

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10.1063/1.2007850

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title = "A study of transparent contact to vertical GaN-based light-emitting diodes",

abstract = "In this study, transparent indium tin oxide (ITO) deposited by sputtering was applied to laser lift-off (LLO) GaN-based vertical light-emitting diodes (VLEDs) and the electrical and optical properties of ITO films were measured as a function of annealing conditions. The measured minimum resistivity of ITO film was about 3.78× 10-4 × cm and the measured optical transmittance at 460 nm was 96.8\% after the annealing process. In this condition, about 1× 10-5 × cm2 of ITO contact resistance to LLO n-GaN could be obtained. By applying the transparent ITO layer to the LLO GaN-based VLEDs, a significant decrease of the forward operating voltage from 3.3 to 3.8 V at 20 mA could be obtained.",

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AU - Kim, D. W.

AU - Lee, H. Y.

AU - Yeom, G. Y.

AU - Sung, Y. J.

PY - 2005/9/1

Y1 - 2005/9/1

N2 - In this study, transparent indium tin oxide (ITO) deposited by sputtering was applied to laser lift-off (LLO) GaN-based vertical light-emitting diodes (VLEDs) and the electrical and optical properties of ITO films were measured as a function of annealing conditions. The measured minimum resistivity of ITO film was about 3.78× 10-4 × cm and the measured optical transmittance at 460 nm was 96.8% after the annealing process. In this condition, about 1× 10-5 × cm2 of ITO contact resistance to LLO n-GaN could be obtained. By applying the transparent ITO layer to the LLO GaN-based VLEDs, a significant decrease of the forward operating voltage from 3.3 to 3.8 V at 20 mA could be obtained.

AB - In this study, transparent indium tin oxide (ITO) deposited by sputtering was applied to laser lift-off (LLO) GaN-based vertical light-emitting diodes (VLEDs) and the electrical and optical properties of ITO films were measured as a function of annealing conditions. The measured minimum resistivity of ITO film was about 3.78× 10-4 × cm and the measured optical transmittance at 460 nm was 96.8% after the annealing process. In this condition, about 1× 10-5 × cm2 of ITO contact resistance to LLO n-GaN could be obtained. By applying the transparent ITO layer to the LLO GaN-based VLEDs, a significant decrease of the forward operating voltage from 3.3 to 3.8 V at 20 mA could be obtained.

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DO - 10.1063/1.2007850

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VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

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ER -

A study of transparent contact to vertical GaN-based light-emitting diodes

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