A study of the failure mechanism of a titanium nitride diffusion barrier

Hoo Jeong Lee; Robert Sinclair; Pamela Li; Bruce Roberts

doi:10.1063/1.371173

A study of the failure mechanism of a titanium nitride diffusion barrier

Hoo Jeong Lee, Robert Sinclair, Pamela Li, Bruce Roberts

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

TiN has been popularly used as a diffusion barrier between Al and Si to prevent "spiking." It has, however, been reported that spiking still occurs through TiN at temperatures higher than 500°C. In this study, we investigated the mechanism of spiking through TiN using high resolution transmission electron microscopy and electron dispersive spectroscopy (EDS). We found TiN to be saturated with Al upon annealing at 550°C. Si also diffuses through TiN and dissolves into Al. Spikes form upon 550°C annealing at the Si substrate. EDS analysis revealed the phase of the spikes to be Al₃Ti containing a considerable amount of Si. These results indicate that spiking through TiN is due to the formation and growth of Al₃Ti after the Al saturation at the bottom of TiN. We discuss these results based on the Al-Ti-Si and Al-Ti-N ternary phase diagrams.

Original language	English
Pages (from-to)	3096-3103
Number of pages	8
Journal	Journal of Applied Physics
Volume	86
Issue number	6
DOIs	https://doi.org/10.1063/1.371173
State	Published - Sep 1999
Externally published	Yes

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title = "A study of the failure mechanism of a titanium nitride diffusion barrier",

abstract = "TiN has been popularly used as a diffusion barrier between Al and Si to prevent {"}spiking.{"} It has, however, been reported that spiking still occurs through TiN at temperatures higher than 500°C. In this study, we investigated the mechanism of spiking through TiN using high resolution transmission electron microscopy and electron dispersive spectroscopy (EDS). We found TiN to be saturated with Al upon annealing at 550°C. Si also diffuses through TiN and dissolves into Al. Spikes form upon 550°C annealing at the Si substrate. EDS analysis revealed the phase of the spikes to be Al3Ti containing a considerable amount of Si. These results indicate that spiking through TiN is due to the formation and growth of Al3Ti after the Al saturation at the bottom of TiN. We discuss these results based on the Al-Ti-Si and Al-Ti-N ternary phase diagrams.",

author = "Lee, \{Hoo Jeong\} and Robert Sinclair and Pamela Li and Bruce Roberts",

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T1 - A study of the failure mechanism of a titanium nitride diffusion barrier

AU - Lee, Hoo Jeong

AU - Sinclair, Robert

AU - Li, Pamela

AU - Roberts, Bruce

PY - 1999/9

Y1 - 1999/9

N2 - TiN has been popularly used as a diffusion barrier between Al and Si to prevent "spiking." It has, however, been reported that spiking still occurs through TiN at temperatures higher than 500°C. In this study, we investigated the mechanism of spiking through TiN using high resolution transmission electron microscopy and electron dispersive spectroscopy (EDS). We found TiN to be saturated with Al upon annealing at 550°C. Si also diffuses through TiN and dissolves into Al. Spikes form upon 550°C annealing at the Si substrate. EDS analysis revealed the phase of the spikes to be Al3Ti containing a considerable amount of Si. These results indicate that spiking through TiN is due to the formation and growth of Al3Ti after the Al saturation at the bottom of TiN. We discuss these results based on the Al-Ti-Si and Al-Ti-N ternary phase diagrams.

AB - TiN has been popularly used as a diffusion barrier between Al and Si to prevent "spiking." It has, however, been reported that spiking still occurs through TiN at temperatures higher than 500°C. In this study, we investigated the mechanism of spiking through TiN using high resolution transmission electron microscopy and electron dispersive spectroscopy (EDS). We found TiN to be saturated with Al upon annealing at 550°C. Si also diffuses through TiN and dissolves into Al. Spikes form upon 550°C annealing at the Si substrate. EDS analysis revealed the phase of the spikes to be Al3Ti containing a considerable amount of Si. These results indicate that spiking through TiN is due to the formation and growth of Al3Ti after the Al saturation at the bottom of TiN. We discuss these results based on the Al-Ti-Si and Al-Ti-N ternary phase diagrams.

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U2 - 10.1063/1.371173

DO - 10.1063/1.371173

M3 - Article

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SN - 0021-8979

VL - 86

SP - 3096

EP - 3103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

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A study of the failure mechanism of a titanium nitride diffusion barrier

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