A Study of Spin coated a-IGZO TFT with Y-doped ZrO2 Gate Insulators

Eun Kyung Jo; Jeong Hyun Ahn; Tae Eun Ha; Eunho Kim; Hwarim Im; Yong Sang Kim

A Study of Spin coated a-IGZO TFT with Y-doped ZrO2 Gate Insulators

Eun Kyung Jo
, Jeong Hyun Ahn
, Tae Eun Ha
, Eunho Kim
, Hwarim Im
, Yong Sang Kim

Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

In this study, an indium gallium zinc oxide (IGZO) thin-film transistor (TFT) based on Yttrium-doped ZrO2 dielectric was studied. We revealed that a-IGZO/1:8 Y-doped ZrO2 TFT deteriorated compared to a-IGZO/ZrO2 TFT. On the other hand, a-IGZO/1:2 Y-doped ZrO2 TFT had better overall properties than a-IGZO/ ZrO2 TFT.

Original language	English
Pages (from-to)	354-357
Number of pages	4
Journal	Proceedings of the International Display Workshops
Volume	29
State	Published - 2022
Externally published	Yes
Event	29th International Display Workshops, IDW 2022 - Fukuoka, Japan Duration: 14 Dec 2022 → 16 Dec 2022

Keywords

a-IGZO TFT
High-k
Solution Process
Y-doped ZrO2

Cite this

@article{39cb04c98b3543b9af4d8633a8850858,

title = "A Study of Spin coated a-IGZO TFT with Y-doped ZrO2 Gate Insulators",

abstract = "In this study, an indium gallium zinc oxide (IGZO) thin-film transistor (TFT) based on Yttrium-doped ZrO2 dielectric was studied. We revealed that a-IGZO/1:8 Y-doped ZrO2 TFT deteriorated compared to a-IGZO/ZrO2 TFT. On the other hand, a-IGZO/1:2 Y-doped ZrO2 TFT had better overall properties than a-IGZO/ ZrO2 TFT.",

keywords = "a-IGZO TFT, High-k, Solution Process, Y-doped ZrO2",

author = "Jo, \{Eun Kyung\} and Ahn, \{Jeong Hyun\} and Ha, \{Tae Eun\} and Eunho Kim and Hwarim Im and Kim, \{Yong Sang\}",

note = "Publisher Copyright: {\textcopyright} 2022 ITE and SID.; 29th International Display Workshops, IDW 2022 ; Conference date: 14-12-2022 Through 16-12-2022",

year = "2022",

language = "English",

volume = "29",

pages = "354--357",

journal = "Proceedings of the International Display Workshops",

issn = "1883-2490",

publisher = "International Display Workshops",

}

TY - JOUR

T1 - A Study of Spin coated a-IGZO TFT with Y-doped ZrO2 Gate Insulators

AU - Jo, Eun Kyung

AU - Ahn, Jeong Hyun

AU - Ha, Tae Eun

AU - Kim, Eunho

AU - Im, Hwarim

AU - Kim, Yong Sang

PY - 2022

Y1 - 2022

N2 - In this study, an indium gallium zinc oxide (IGZO) thin-film transistor (TFT) based on Yttrium-doped ZrO2 dielectric was studied. We revealed that a-IGZO/1:8 Y-doped ZrO2 TFT deteriorated compared to a-IGZO/ZrO2 TFT. On the other hand, a-IGZO/1:2 Y-doped ZrO2 TFT had better overall properties than a-IGZO/ ZrO2 TFT.

AB - In this study, an indium gallium zinc oxide (IGZO) thin-film transistor (TFT) based on Yttrium-doped ZrO2 dielectric was studied. We revealed that a-IGZO/1:8 Y-doped ZrO2 TFT deteriorated compared to a-IGZO/ZrO2 TFT. On the other hand, a-IGZO/1:2 Y-doped ZrO2 TFT had better overall properties than a-IGZO/ ZrO2 TFT.

KW - a-IGZO TFT

KW - High-k

KW - Solution Process

KW - Y-doped ZrO2

UR - https://www.scopus.com/pages/publications/85175233754

M3 - Conference article

AN - SCOPUS:85175233754

SN - 1883-2490

VL - 29

SP - 354

EP - 357

JO - Proceedings of the International Display Workshops

JF - Proceedings of the International Display Workshops

T2 - 29th International Display Workshops, IDW 2022

Y2 - 14 December 2022 through 16 December 2022

ER -

A Study of Spin coated a-IGZO TFT with Y-doped ZrO2 Gate Insulators

Abstract

Keywords

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