A study of sapphire etching characteristics using BCl3-based inductively coupled plasmas

Chang Hyun Jeong; Dong Woo Kim; Kyong Nam Kim; Geun Young Yeom

doi:10.1143/jjap.41.6206

A study of sapphire etching characteristics using BCl₃-based inductively coupled plasmas

Chang Hyun Jeong
, Dong Woo Kim
, Kyong Nam Kim
, Geun Young Yeom

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Cl₂, HCl, and HBr added BCl₃-based inductively coupled plasmas were used to etch (0001) sapphire wafers and their etch characteristics were investigated. The plasma characteristics were monitored in-situ by optical emission spectroscopy and a Langmuir probe. A photoresist was used as the etch mask and an etch selectivity greater than 1 with the etch rate of 3800 Å/min could be obtained with 20%HCl/80%BCl₃. The most anisotropic etch profile could be observed in 10%HBr/90%BCl₃.

Original language	English
Pages (from-to)	6206-6208
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1143/jjap.41.6206
State	Published - Oct 2002

Keywords

BCl-based inductively coupled plasmas
Cl/BCl
HBr/BCl
HCl/BCl
P hotoresist etch mask
Sapphire etching

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10.1143/jjap.41.6206

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title = "A study of sapphire etching characteristics using BCl3-based inductively coupled plasmas",

abstract = "Cl2, HCl, and HBr added BCl3-based inductively coupled plasmas were used to etch (0001) sapphire wafers and their etch characteristics were investigated. The plasma characteristics were monitored in-situ by optical emission spectroscopy and a Langmuir probe. A photoresist was used as the etch mask and an etch selectivity greater than 1 with the etch rate of 3800 {\AA}/min could be obtained with 20\%HCl/80\%BCl3. The most anisotropic etch profile could be observed in 10\%HBr/90\%BCl3.",

keywords = "BCl-based inductively coupled plasmas, Cl/BCl, HBr/BCl, HCl/BCl, P hotoresist etch mask, Sapphire etching",

author = "Jeong, \{Chang Hyun\} and Kim, \{Dong Woo\} and Kim, \{Kyong Nam\} and Yeom, \{Geun Young\}",

year = "2002",

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doi = "10.1143/jjap.41.6206",

language = "English",

volume = "41",

pages = "6206--6208",

journal = "Japanese Journal of Applied Physics",

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T1 - A study of sapphire etching characteristics using BCl3-based inductively coupled plasmas

AU - Jeong, Chang Hyun

AU - Kim, Dong Woo

AU - Kim, Kyong Nam

AU - Yeom, Geun Young

PY - 2002/10

Y1 - 2002/10

N2 - Cl2, HCl, and HBr added BCl3-based inductively coupled plasmas were used to etch (0001) sapphire wafers and their etch characteristics were investigated. The plasma characteristics were monitored in-situ by optical emission spectroscopy and a Langmuir probe. A photoresist was used as the etch mask and an etch selectivity greater than 1 with the etch rate of 3800 Å/min could be obtained with 20%HCl/80%BCl3. The most anisotropic etch profile could be observed in 10%HBr/90%BCl3.

AB - Cl2, HCl, and HBr added BCl3-based inductively coupled plasmas were used to etch (0001) sapphire wafers and their etch characteristics were investigated. The plasma characteristics were monitored in-situ by optical emission spectroscopy and a Langmuir probe. A photoresist was used as the etch mask and an etch selectivity greater than 1 with the etch rate of 3800 Å/min could be obtained with 20%HCl/80%BCl3. The most anisotropic etch profile could be observed in 10%HBr/90%BCl3.

KW - BCl-based inductively coupled plasmas

KW - Cl/BCl

KW - HBr/BCl

KW - HCl/BCl

KW - P hotoresist etch mask

KW - Sapphire etching

UR - https://www.scopus.com/pages/publications/0036819439

U2 - 10.1143/jjap.41.6206

DO - 10.1143/jjap.41.6206

M3 - Article

AN - SCOPUS:0036819439

SN - 0021-4922

VL - 41

SP - 6206

EP - 6208

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10

ER -

A study of sapphire etching characteristics using BCl₃-based inductively coupled plasmas

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Keywords

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