A Study of High-Voltage p-Type MOSFET Degradation under AC Stress

Dongjun Lee; Chungje Na; Chiwoo Lee; Changsub Lee; Sunghoi Hur; Duheon Song; Junghyuk Choi; Byoungdeog Choi

doi:10.1109/TED.2015.2451003

A Study of High-Voltage p-Type MOSFET Degradation under AC Stress

Dongjun Lee, Chungje Na, Chiwoo Lee, Changsub Lee, Sunghoi Hur, Duheon Song, Junghyuk Choi, Byoungdeog Choi

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this paper, the degradation characteristics of high-voltage (HV) p-type MOSFETs are investigated during negative unipolar ac stress on the gate electrode. The threshold voltage under ac stress is shifted gradually by both the negative-bias temperature-instability mechanism and Fowler-Nordheim degradation. We qualitatively analyze the degradation characteristics of HV p-type MOSFETs under ac stress, and observe the threshold voltage saturation for HV p-type MOSFETs at long ac stress. Based on the effects of temperature and duty cycles, we offer a suitable model of degradation saturation after long ac stress, which is caused by interface trap saturation and recovery during pulse delay timing, which is dependent on thermal activation energy.

Original language	English
Article number	7165623
Pages (from-to)	2940-2944
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	9
DOIs	https://doi.org/10.1109/TED.2015.2451003
State	Published - 1 Sep 2015

Keywords

AC stress
Fowler-Nordheim (FN) degradation
high-voltage (HV) p-type MOSFET
negative-bias temperature instability (NBTI)
saturation.

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10.1109/TED.2015.2451003

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title = "A Study of High-Voltage p-Type MOSFET Degradation under AC Stress",

abstract = "In this paper, the degradation characteristics of high-voltage (HV) p-type MOSFETs are investigated during negative unipolar ac stress on the gate electrode. The threshold voltage under ac stress is shifted gradually by both the negative-bias temperature-instability mechanism and Fowler-Nordheim degradation. We qualitatively analyze the degradation characteristics of HV p-type MOSFETs under ac stress, and observe the threshold voltage saturation for HV p-type MOSFETs at long ac stress. Based on the effects of temperature and duty cycles, we offer a suitable model of degradation saturation after long ac stress, which is caused by interface trap saturation and recovery during pulse delay timing, which is dependent on thermal activation energy.",

keywords = "AC stress, Fowler-Nordheim (FN) degradation, high-voltage (HV) p-type MOSFET, negative-bias temperature instability (NBTI), saturation.",

author = "Dongjun Lee and Chungje Na and Chiwoo Lee and Changsub Lee and Sunghoi Hur and Duheon Song and Junghyuk Choi and Byoungdeog Choi",

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T1 - A Study of High-Voltage p-Type MOSFET Degradation under AC Stress

AU - Lee, Dongjun

AU - Na, Chungje

AU - Lee, Chiwoo

AU - Lee, Changsub

AU - Hur, Sunghoi

AU - Song, Duheon

AU - Choi, Junghyuk

AU - Choi, Byoungdeog

PY - 2015/9/1

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N2 - In this paper, the degradation characteristics of high-voltage (HV) p-type MOSFETs are investigated during negative unipolar ac stress on the gate electrode. The threshold voltage under ac stress is shifted gradually by both the negative-bias temperature-instability mechanism and Fowler-Nordheim degradation. We qualitatively analyze the degradation characteristics of HV p-type MOSFETs under ac stress, and observe the threshold voltage saturation for HV p-type MOSFETs at long ac stress. Based on the effects of temperature and duty cycles, we offer a suitable model of degradation saturation after long ac stress, which is caused by interface trap saturation and recovery during pulse delay timing, which is dependent on thermal activation energy.

AB - In this paper, the degradation characteristics of high-voltage (HV) p-type MOSFETs are investigated during negative unipolar ac stress on the gate electrode. The threshold voltage under ac stress is shifted gradually by both the negative-bias temperature-instability mechanism and Fowler-Nordheim degradation. We qualitatively analyze the degradation characteristics of HV p-type MOSFETs under ac stress, and observe the threshold voltage saturation for HV p-type MOSFETs at long ac stress. Based on the effects of temperature and duty cycles, we offer a suitable model of degradation saturation after long ac stress, which is caused by interface trap saturation and recovery during pulse delay timing, which is dependent on thermal activation energy.

KW - AC stress

KW - Fowler-Nordheim (FN) degradation

KW - high-voltage (HV) p-type MOSFET

KW - negative-bias temperature instability (NBTI)

KW - saturation.

UR - https://www.scopus.com/pages/publications/85027933009

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DO - 10.1109/TED.2015.2451003

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

A Study of High-Voltage p-Type MOSFET Degradation under AC Stress

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