A simple figure of merit of RF MOSFET for low-noise amplifier design

Ickhyun Song; Jongwook Jeon; Hee Sauk Jhon; Junsoo Kim; Byung Gook Park; Jong Duk Lee; Hyungcheol Shin

doi:10.1109/LED.2008.2006863

A simple figure of merit of RF MOSFET for low-noise amplifier design

Ickhyun Song
, Jongwook Jeon
, Hee Sauk Jhon
, Junsoo Kim
, Byung Gook Park
, Jong Duk Lee
, Hyungcheol Shin

Seoul National University

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

In this letter, it is proposed that g_m²/ I_D, which has been used as the figure of merit (FoM) of MOSFETs for analog amplifiers, can also be used as the RF MOSFET FoM for optimizing low-noise amplifier (LNA) performance. From a simple small-signal equivalent circuit, signal gain, noise figure, and power consumption equations are derived analytically and verified with the measurement results of the fabricated LNA. The proposed g_m²/I_D predicts the optimal bias point for the maximum LNA performance.

Original language	English
Pages (from-to)	1380-1382
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	12
DOIs	https://doi.org/10.1109/LED.2008.2006863
State	Published - 2008
Externally published	Yes

Keywords

Channel thermal noise
Figure of merit (FoM)
Low-noise amplifier (LNA)
MOSFET

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10.1109/LED.2008.2006863

Cite this

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title = "A simple figure of merit of RF MOSFET for low-noise amplifier design",

abstract = "In this letter, it is proposed that gm2/ ID, which has been used as the figure of merit (FoM) of MOSFETs for analog amplifiers, can also be used as the RF MOSFET FoM for optimizing low-noise amplifier (LNA) performance. From a simple small-signal equivalent circuit, signal gain, noise figure, and power consumption equations are derived analytically and verified with the measurement results of the fabricated LNA. The proposed gm2/ID predicts the optimal bias point for the maximum LNA performance.",

keywords = "Channel thermal noise, Figure of merit (FoM), Low-noise amplifier (LNA), MOSFET",

author = "Ickhyun Song and Jongwook Jeon and Jhon, \{Hee Sauk\} and Junsoo Kim and Park, \{Byung Gook\} and Lee, \{Jong Duk\} and Hyungcheol Shin",

year = "2008",

doi = "10.1109/LED.2008.2006863",

language = "English",

volume = "29",

pages = "1380--1382",

journal = "IEEE Electron Device Letters",

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T1 - A simple figure of merit of RF MOSFET for low-noise amplifier design

AU - Song, Ickhyun

AU - Jeon, Jongwook

AU - Jhon, Hee Sauk

AU - Kim, Junsoo

AU - Park, Byung Gook

AU - Lee, Jong Duk

AU - Shin, Hyungcheol

PY - 2008

Y1 - 2008

N2 - In this letter, it is proposed that gm2/ ID, which has been used as the figure of merit (FoM) of MOSFETs for analog amplifiers, can also be used as the RF MOSFET FoM for optimizing low-noise amplifier (LNA) performance. From a simple small-signal equivalent circuit, signal gain, noise figure, and power consumption equations are derived analytically and verified with the measurement results of the fabricated LNA. The proposed gm2/ID predicts the optimal bias point for the maximum LNA performance.

AB - In this letter, it is proposed that gm2/ ID, which has been used as the figure of merit (FoM) of MOSFETs for analog amplifiers, can also be used as the RF MOSFET FoM for optimizing low-noise amplifier (LNA) performance. From a simple small-signal equivalent circuit, signal gain, noise figure, and power consumption equations are derived analytically and verified with the measurement results of the fabricated LNA. The proposed gm2/ID predicts the optimal bias point for the maximum LNA performance.

KW - Channel thermal noise

KW - Figure of merit (FoM)

KW - Low-noise amplifier (LNA)

KW - MOSFET

UR - https://www.scopus.com/pages/publications/57049109226

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DO - 10.1109/LED.2008.2006863

M3 - Article

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SP - 1380

EP - 1382

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

A simple figure of merit of RF MOSFET for low-noise amplifier design

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Keywords

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