A simple failure analysis method for dynamic random access memory capacitors with supporters using a statistical tracing program

This paper proposes a computer program to analyze two-bit failures in dynamic random access memory cell capacitors that are fabricated using the "Mechanically Enhanced Storage node for virtually unlimited Height" (MESH) technique. The program, called MTP (for MESH Two-Bits Tracing Program), classifies and portions all two-bit failure addresses into failure cases, and enables the prediction of the cause of each failure and its statistical portion in a short time. By comparing the program output with transmission electron microscope (TEM) imagery, we found that the results were highly accurate. By eliminating the step of obtaining TEM imagery, the program can reduce failure analysis time considerably.