Abstract
As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.
| Original language | English |
|---|---|
| Pages (from-to) | 338-344 |
| Number of pages | 7 |
| Journal | Nature |
| Volume | 479 |
| Issue number | 7373 |
| DOIs | |
| State | Published - 17 Nov 2011 |
| Externally published | Yes |
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