A Process-Aware Analytical Gate Resistance Model for Nanosheet Field-Effect Transistors

In this paper, we propose a process-aware analytical gate resistance model for nanosheet field-effect transistors (NSFETs). The proposed NSFET gate resistance is modeled by applying the distributed resistance coefficient, which can be used when current flows vertically and horizontally. By predicting the direction of current flow, the resistance components are approximated in series with parallel connection of divided segments. The proposed model can reflect changes in structural parameters, making it possible to predict the scaling trend of NSFETs. This is validated through TCAD simulation results. The proposed model can be implemented in general compact models such as the Berkeley short channel IGFET model (BSIM)-common multi-gate (CMG) and can be used to predict circuit performance more accurately.