A numerical study on slurry flow with CMP pad grooves

Seokjun Hong; Sunghoon Bae; Seulgi Choi; Pengzhan Liu; Hojoong Kim; Taesung Kim

doi:10.1016/j.mee.2020.111437

A numerical study on slurry flow with CMP pad grooves

Seokjun Hong
, Sunghoon Bae
, Seulgi Choi
, Pengzhan Liu
, Hojoong Kim
, Taesung Kim

Department of Mechanical Engineering

Sungkyunkwan University
Samsung

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

In this study, chemical mechanical polishing (CMP) slurry flow is investigated with two pad groove patterns, circular and circular plus radial. First, slurry flow is predicted by a numerical method, and slurry velocity is analyzed by pad groove type. The streamline of the slurry flow and wall shear stress on the wafer show that the radial groove efficiently moves the slurry into the gap between the pad and the wafer, and the effect of improved slurry flow on CMP performance is verified by experimental results. The radial groove also improved process non-uniformity, and a high rotation speed combined with the radial groove improved removal rate and non-uniformity by 11.2% and 63.9%, respectively.

Original language	English
Article number	111437
Journal	Microelectronic Engineering
Volume	234
DOIs	https://doi.org/10.1016/j.mee.2020.111437
State	Published - 15 Oct 2020

Keywords

Chemical mechanical polishing (CMP)
Numerical analysis
Polishing pad
Semiconductor fabrication
Slurry flow

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10.1016/j.mee.2020.111437

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title = "A numerical study on slurry flow with CMP pad grooves",

abstract = "In this study, chemical mechanical polishing (CMP) slurry flow is investigated with two pad groove patterns, circular and circular plus radial. First, slurry flow is predicted by a numerical method, and slurry velocity is analyzed by pad groove type. The streamline of the slurry flow and wall shear stress on the wafer show that the radial groove efficiently moves the slurry into the gap between the pad and the wafer, and the effect of improved slurry flow on CMP performance is verified by experimental results. The radial groove also improved process non-uniformity, and a high rotation speed combined with the radial groove improved removal rate and non-uniformity by 11.2\% and 63.9\%, respectively.",

keywords = "Chemical mechanical polishing (CMP), Numerical analysis, Polishing pad, Semiconductor fabrication, Slurry flow",

author = "Seokjun Hong and Sunghoon Bae and Seulgi Choi and Pengzhan Liu and Hojoong Kim and Taesung Kim",

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T1 - A numerical study on slurry flow with CMP pad grooves

AU - Hong, Seokjun

AU - Bae, Sunghoon

AU - Choi, Seulgi

AU - Liu, Pengzhan

AU - Kim, Hojoong

AU - Kim, Taesung

PY - 2020/10/15

Y1 - 2020/10/15

N2 - In this study, chemical mechanical polishing (CMP) slurry flow is investigated with two pad groove patterns, circular and circular plus radial. First, slurry flow is predicted by a numerical method, and slurry velocity is analyzed by pad groove type. The streamline of the slurry flow and wall shear stress on the wafer show that the radial groove efficiently moves the slurry into the gap between the pad and the wafer, and the effect of improved slurry flow on CMP performance is verified by experimental results. The radial groove also improved process non-uniformity, and a high rotation speed combined with the radial groove improved removal rate and non-uniformity by 11.2% and 63.9%, respectively.

AB - In this study, chemical mechanical polishing (CMP) slurry flow is investigated with two pad groove patterns, circular and circular plus radial. First, slurry flow is predicted by a numerical method, and slurry velocity is analyzed by pad groove type. The streamline of the slurry flow and wall shear stress on the wafer show that the radial groove efficiently moves the slurry into the gap between the pad and the wafer, and the effect of improved slurry flow on CMP performance is verified by experimental results. The radial groove also improved process non-uniformity, and a high rotation speed combined with the radial groove improved removal rate and non-uniformity by 11.2% and 63.9%, respectively.

KW - Chemical mechanical polishing (CMP)

KW - Numerical analysis

KW - Polishing pad

KW - Semiconductor fabrication

KW - Slurry flow

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DO - 10.1016/j.mee.2020.111437

M3 - Article

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SN - 0167-9317

VL - 234

JO - Microelectronic Engineering

JF - Microelectronic Engineering

M1 - 111437

ER -

A numerical study on slurry flow with CMP pad grooves

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Keywords

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