A novel multicrystalline silicon solar cell using grain boundary etching treatment and transparent conducting oxide

Dong Gun Lim; Dong Min Jang; Junsin Yi

doi:10.1016/S0927-0248(01)00206-9

A novel multicrystalline silicon solar cell using grain boundary etching treatment and transparent conducting oxide

Dong Gun Lim
, Dong Min Jang
, Junsin Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Grain boundary (GB) in multicrystalline silicon (mc-Si) degrades a conversion efficiency of mc-Si solar cell. To reduce the GB effect, we investigated various parameters such as the preferential GB etch, etch time, tin-doped indium-oxide (ITO) electrode, heat treatment, and emitter layer effect. Among various preferential etchants such as Sirtl, Yang, Secco, and Schimmel, a Schimmel etchant illustrated an excellent preferential etching property. We used RF magnetron sputter grown ITO film as a top contact metal. ITO films served as a top electrode as well as an effective AR coating layer. With well-fabricated mc-Si solar cells, we were able to achieve conversion efficiency as high as 16.6% at the input power of 20 mW/cm².

Original language	English
Pages (from-to)	571-578
Number of pages	8
Journal	Solar Energy Materials and Solar Cells
Volume	72
Issue number	1-4
DOIs	https://doi.org/10.1016/S0927-0248(01)00206-9
State	Published - Apr 2002

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Grain boundary
ITO
Multicrystalline silicon solar cell
Preferential etching

Access to Document

10.1016/S0927-0248(01)00206-9

Cite this

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title = "A novel multicrystalline silicon solar cell using grain boundary etching treatment and transparent conducting oxide",

abstract = "Grain boundary (GB) in multicrystalline silicon (mc-Si) degrades a conversion efficiency of mc-Si solar cell. To reduce the GB effect, we investigated various parameters such as the preferential GB etch, etch time, tin-doped indium-oxide (ITO) electrode, heat treatment, and emitter layer effect. Among various preferential etchants such as Sirtl, Yang, Secco, and Schimmel, a Schimmel etchant illustrated an excellent preferential etching property. We used RF magnetron sputter grown ITO film as a top contact metal. ITO films served as a top electrode as well as an effective AR coating layer. With well-fabricated mc-Si solar cells, we were able to achieve conversion efficiency as high as 16.6\% at the input power of 20 mW/cm2.",

keywords = "Grain boundary, ITO, Multicrystalline silicon solar cell, Preferential etching",

author = "Lim, \{Dong Gun\} and Jang, \{Dong Min\} and Junsin Yi",

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doi = "10.1016/S0927-0248(01)00206-9",

language = "English",

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journal = "Solar Energy Materials and Solar Cells",

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TY - JOUR

T1 - A novel multicrystalline silicon solar cell using grain boundary etching treatment and transparent conducting oxide

AU - Lim, Dong Gun

AU - Jang, Dong Min

AU - Yi, Junsin

PY - 2002/4

Y1 - 2002/4

N2 - Grain boundary (GB) in multicrystalline silicon (mc-Si) degrades a conversion efficiency of mc-Si solar cell. To reduce the GB effect, we investigated various parameters such as the preferential GB etch, etch time, tin-doped indium-oxide (ITO) electrode, heat treatment, and emitter layer effect. Among various preferential etchants such as Sirtl, Yang, Secco, and Schimmel, a Schimmel etchant illustrated an excellent preferential etching property. We used RF magnetron sputter grown ITO film as a top contact metal. ITO films served as a top electrode as well as an effective AR coating layer. With well-fabricated mc-Si solar cells, we were able to achieve conversion efficiency as high as 16.6% at the input power of 20 mW/cm2.

AB - Grain boundary (GB) in multicrystalline silicon (mc-Si) degrades a conversion efficiency of mc-Si solar cell. To reduce the GB effect, we investigated various parameters such as the preferential GB etch, etch time, tin-doped indium-oxide (ITO) electrode, heat treatment, and emitter layer effect. Among various preferential etchants such as Sirtl, Yang, Secco, and Schimmel, a Schimmel etchant illustrated an excellent preferential etching property. We used RF magnetron sputter grown ITO film as a top contact metal. ITO films served as a top electrode as well as an effective AR coating layer. With well-fabricated mc-Si solar cells, we were able to achieve conversion efficiency as high as 16.6% at the input power of 20 mW/cm2.

KW - Grain boundary

KW - ITO

KW - Multicrystalline silicon solar cell

KW - Preferential etching

UR - https://www.scopus.com/pages/publications/0036533247

U2 - 10.1016/S0927-0248(01)00206-9

DO - 10.1016/S0927-0248(01)00206-9

M3 - Article

AN - SCOPUS:0036533247

SN - 0927-0248

VL - 72

SP - 571

EP - 578

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 1-4

ER -

A novel multicrystalline silicon solar cell using grain boundary etching treatment and transparent conducting oxide

Abstract

UN SDGs

Keywords

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