A Novel Gate Driver Circuit for Depletion Mode a-IGZO TFTs†

Jongsu Oh; Yong Sang Kim

doi:10.1002/SDTP.13555

A Novel Gate Driver Circuit for Depletion Mode a-IGZO TFTs^†

Jongsu Oh, Yong Sang Kim

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper proposes a novel gate driver circuit to realize high reliability using depletion mode a-InGaZnO thin-film transistors (TFTs). Using 3T1C circuit configuration, we prevented the leakage path for Q node by realizing gate-to-source voltage (V_GS) under 0 V value. The proposed circuit can be operated when the V_TH is shifted to-3 V from the initial value (V_TH=-0.35 V). Also, the novel gate driver circuit with the AC driven pull-down units can maintain the almost same normalized value from-1 V to-3 V of the V_TH shift range when compared to the results of circuit with the DC driven pull-down units. The proposed circuit can maintain the power consumption within 3.65 times of the normal value at-5 V threshold voltage value.

Original language	English
Title of host publication	Digest of Technical Papers - SID International Symposium
Editors	Baoping Wang, Chi-Ming Che, Ching W. Tang, Han-Ping D. Shieh, Hoi S. Kwok, Hongxing Xu, Ming Liu, Qionghai Dai, Shou Peng, Vivian Wing-Wah Yam, Wei Huang, Xiaomo Wang, Yong Cao, Youliao Zheng, Yue Hao, Yunqi Liu, Zhongcan Ouyang, Zhonglin Wang, Zuyan Xu
Publisher	John Wiley and Sons Inc
Pages	541-543
Number of pages	3
Edition	S1
ISBN (Electronic)	9781510896161, 9781510896161, 9781510896161
DOIs	https://doi.org/10.1002/SDTP.13555
State	Published - 2019
Externally published	Yes
Event	International Conference on Display Technology, ICDT 2019 - Suzhou, China Duration: 26 Mar 2019 → 29 Mar 2019

Publication series

Name	Digest of Technical Papers - SID International Symposium
Number	S1
Volume	50
ISSN (Print)	0097-966X
ISSN (Electronic)	2168-0159

Conference

Conference	International Conference on Display Technology, ICDT 2019
Country/Territory	China
City	Suzhou
Period	26/03/19 → 29/03/19

Keywords

Depletion Mode
Gate Driver Circuit
Igzo TFT
Leakage Current
Power Consumption
Reliability
Threshold Voltage

Access to Document

10.1002/SDTP.13555

Cite this

Oh, J., & Kim, Y. S. (2019). A Novel Gate Driver Circuit for Depletion Mode a-IGZO TFTs^†. In B. Wang, C.-M. Che, C. W. Tang, H.-P. D. Shieh, H. S. Kwok, H. Xu, M. Liu, Q. Dai, S. Peng, V. W.-W. Yam, W. Huang, X. Wang, Y. Cao, Y. Zheng, Y. Hao, Y. Liu, Z. Ouyang, Z. Wang, & Z. Xu (Eds.), Digest of Technical Papers - SID International Symposium (S1 ed., pp. 541-543). (Digest of Technical Papers - SID International Symposium; Vol. 50, No. S1). John Wiley and Sons Inc. https://doi.org/10.1002/SDTP.13555

Oh, Jongsu ; Kim, Yong Sang. / A Novel Gate Driver Circuit for Depletion Mode a-IGZO TFTs^†. Digest of Technical Papers - SID International Symposium. editor / Baoping Wang ; Chi-Ming Che ; Ching W. Tang ; Han-Ping D. Shieh ; Hoi S. Kwok ; Hongxing Xu ; Ming Liu ; Qionghai Dai ; Shou Peng ; Vivian Wing-Wah Yam ; Wei Huang ; Xiaomo Wang ; Yong Cao ; Youliao Zheng ; Yue Hao ; Yunqi Liu ; Zhongcan Ouyang ; Zhonglin Wang ; Zuyan Xu. S1. ed. John Wiley and Sons Inc, 2019. pp. 541-543 (Digest of Technical Papers - SID International Symposium; S1).

@inproceedings{75d24af015e1452ebbe6dbde5c43a409,

title = "A Novel Gate Driver Circuit for Depletion Mode a-IGZO TFTs†",

abstract = "This paper proposes a novel gate driver circuit to realize high reliability using depletion mode a-InGaZnO thin-film transistors (TFTs). Using 3T1C circuit configuration, we prevented the leakage path for Q node by realizing gate-to-source voltage (VGS) under 0 V value. The proposed circuit can be operated when the VTH is shifted to-3 V from the initial value (VTH=-0.35 V). Also, the novel gate driver circuit with the AC driven pull-down units can maintain the almost same normalized value from-1 V to-3 V of the VTH shift range when compared to the results of circuit with the DC driven pull-down units. The proposed circuit can maintain the power consumption within 3.65 times of the normal value at-5 V threshold voltage value.",

keywords = "Depletion Mode, Gate Driver Circuit, Igzo TFT, Leakage Current, Power Consumption, Reliability, Threshold Voltage",

author = "Jongsu Oh and Kim, \{Yong Sang\}",

note = "Publisher Copyright: {\textcopyright} 2019, John Wiley and Sons Inc. All rights reserved.; International Conference on Display Technology, ICDT 2019 ; Conference date: 26-03-2019 Through 29-03-2019",

year = "2019",

doi = "10.1002/SDTP.13555",

language = "English",

series = "Digest of Technical Papers - SID International Symposium",

publisher = "John Wiley and Sons Inc",

number = "S1",

pages = "541--543",

editor = "Baoping Wang and Chi-Ming Che and Tang, \{Ching W.\} and Shieh, \{Han-Ping D.\} and Kwok, \{Hoi S.\} and Hongxing Xu and Ming Liu and Qionghai Dai and Shou Peng and Yam, \{Vivian Wing-Wah\} and Wei Huang and Xiaomo Wang and Yong Cao and Youliao Zheng and Yue Hao and Yunqi Liu and Zhongcan Ouyang and Zhonglin Wang and Zuyan Xu",

booktitle = "Digest of Technical Papers - SID International Symposium",

edition = "S1",

}

Oh, J & Kim, YS 2019, A Novel Gate Driver Circuit for Depletion Mode a-IGZO TFTs^†. in B Wang, C-M Che, CW Tang, H-PD Shieh, HS Kwok, H Xu, M Liu, Q Dai, S Peng, VW-W Yam, W Huang, X Wang, Y Cao, Y Zheng, Y Hao, Y Liu, Z Ouyang, Z Wang & Z Xu (eds), Digest of Technical Papers - SID International Symposium. S1 edn, Digest of Technical Papers - SID International Symposium, no. S1, vol. 50, John Wiley and Sons Inc, pp. 541-543, International Conference on Display Technology, ICDT 2019, Suzhou, China, 26/03/19. https://doi.org/10.1002/SDTP.13555

A Novel Gate Driver Circuit for Depletion Mode a-IGZO TFTs^†. / Oh, Jongsu; Kim, Yong Sang.
Digest of Technical Papers - SID International Symposium. ed. / Baoping Wang; Chi-Ming Che; Ching W. Tang; Han-Ping D. Shieh; Hoi S. Kwok; Hongxing Xu; Ming Liu; Qionghai Dai; Shou Peng; Vivian Wing-Wah Yam; Wei Huang; Xiaomo Wang; Yong Cao; Youliao Zheng; Yue Hao; Yunqi Liu; Zhongcan Ouyang; Zhonglin Wang; Zuyan Xu. S1. ed. John Wiley and Sons Inc, 2019. p. 541-543 (Digest of Technical Papers - SID International Symposium; Vol. 50, No. S1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Novel Gate Driver Circuit for Depletion Mode a-IGZO TFTs†

AU - Oh, Jongsu

AU - Kim, Yong Sang

PY - 2019

Y1 - 2019

N2 - This paper proposes a novel gate driver circuit to realize high reliability using depletion mode a-InGaZnO thin-film transistors (TFTs). Using 3T1C circuit configuration, we prevented the leakage path for Q node by realizing gate-to-source voltage (VGS) under 0 V value. The proposed circuit can be operated when the VTH is shifted to-3 V from the initial value (VTH=-0.35 V). Also, the novel gate driver circuit with the AC driven pull-down units can maintain the almost same normalized value from-1 V to-3 V of the VTH shift range when compared to the results of circuit with the DC driven pull-down units. The proposed circuit can maintain the power consumption within 3.65 times of the normal value at-5 V threshold voltage value.

AB - This paper proposes a novel gate driver circuit to realize high reliability using depletion mode a-InGaZnO thin-film transistors (TFTs). Using 3T1C circuit configuration, we prevented the leakage path for Q node by realizing gate-to-source voltage (VGS) under 0 V value. The proposed circuit can be operated when the VTH is shifted to-3 V from the initial value (VTH=-0.35 V). Also, the novel gate driver circuit with the AC driven pull-down units can maintain the almost same normalized value from-1 V to-3 V of the VTH shift range when compared to the results of circuit with the DC driven pull-down units. The proposed circuit can maintain the power consumption within 3.65 times of the normal value at-5 V threshold voltage value.

KW - Depletion Mode

KW - Gate Driver Circuit

KW - Igzo TFT

KW - Leakage Current

KW - Power Consumption

KW - Reliability

KW - Threshold Voltage

UR - https://www.scopus.com/pages/publications/85134229236

U2 - 10.1002/SDTP.13555

DO - 10.1002/SDTP.13555

M3 - Conference contribution

AN - SCOPUS:85134229236

T3 - Digest of Technical Papers - SID International Symposium

SP - 541

EP - 543

BT - Digest of Technical Papers - SID International Symposium

A2 - Wang, Baoping

A2 - Che, Chi-Ming

A2 - Tang, Ching W.

A2 - Shieh, Han-Ping D.

A2 - Kwok, Hoi S.

A2 - Xu, Hongxing

A2 - Liu, Ming

A2 - Dai, Qionghai

A2 - Peng, Shou

A2 - Yam, Vivian Wing-Wah

A2 - Huang, Wei

A2 - Wang, Xiaomo

A2 - Cao, Yong

A2 - Zheng, Youliao

A2 - Hao, Yue

A2 - Liu, Yunqi

A2 - Ouyang, Zhongcan

A2 - Wang, Zhonglin

A2 - Xu, Zuyan

PB - John Wiley and Sons Inc

T2 - International Conference on Display Technology, ICDT 2019

Y2 - 26 March 2019 through 29 March 2019

ER -

Oh J, Kim YS. A Novel Gate Driver Circuit for Depletion Mode a-IGZO TFTs^†. In Wang B, Che CM, Tang CW, Shieh HPD, Kwok HS, Xu H, Liu M, Dai Q, Peng S, Yam VWW, Huang W, Wang X, Cao Y, Zheng Y, Hao Y, Liu Y, Ouyang Z, Wang Z, Xu Z, editors, Digest of Technical Papers - SID International Symposium. S1 ed. John Wiley and Sons Inc. 2019. p. 541-543. (Digest of Technical Papers - SID International Symposium; S1). doi: 10.1002/SDTP.13555