A novel damage-free high-k etch technique using neutral beam-assisted atomic layer etching (NBALE) for Sub-32nm technology node low power metal gate/High-k dielectric CMOSFETs

  • K. S. Min
  • , C. Y. Kang
  • , C. Park
  • , C. S. Park
  • , B. J. Park
  • , J. B. Park
  • , M. M. Hussain
  • , Jack C. Lee
  • , B. H. Lee
  • , P. Kirsch
  • , H. H. Tseng
  • , R. Jammy
  • , G. Y. Yeom

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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