A new pixel circuit employing data reflected negative bias annealing and threshold voltage compensation for stable, uniform a-Si:H TFT AMOLED

  • Sang Myeon Han
  • , Hee Sun Shin
  • , Yong Hoon Kim
  • , Hyun Sang Park
  • , Min Koo Han

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We proposed 6 TFTs pixel can reduce VTH degradation of driving a-Si:H TFT by Data Reflected Negative Bias Annealing (DRNBA) and compensate VTH variation induced by non-uniform degradation of each a-Si:H pixel caused by its various emission history. The proposed pixel was proved by SPICE simulations. Although VTH of driving TFT was varied from 2.5V to 3.0V and 3.5V, the current of OLED was changed by only 1.5% and 2.8% in the emission period, respectively. During the negative bias annealing period, the negative VGS is applied to the driving TFT by using its own data signal. It is expected that the VTH shift of the driving TFT can be reduced effectively and the shifted VTH can be compensated in our new pixel, which can enable stable and uniform a-Si:H TFT AMOLED.

Original languageEnglish
Title of host publicationSociety for Information Display - 10th Asian Symposium on Information Display 2007, ASID'07
Pages260-264
Number of pages5
StatePublished - 2007
Externally publishedYes
Event10th Asian Symposium on Information Display, ASID'07 - Singapore, Singapore
Duration: 2 Aug 20073 Aug 2007

Publication series

NameSociety for Information Display - 10th Asian Symposium on Information Display 2007, ASID'07

Conference

Conference10th Asian Symposium on Information Display, ASID'07
Country/TerritorySingapore
CitySingapore
Period2/08/073/08/07

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