A new noise parameter model of short-channel MOSFETs

Jongwook Jeon; Ickhyun Song; In Man Kang; Yeonam Yun; Byung Gook Park; Jong Duk Lee; Hyungeheol Shin

doi:10.1109/RFIC.2007.380964

A new noise parameter model of short-channel MOSFETs

Jongwook Jeon
, Ickhyun Song
, In Man Kang
, Yeonam Yun
, Byung Gook Park
, Jong Duk Lee
, Hyungeheol Shin

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

In this paper, a closed form expression for noise parameters of MOSFETs are derived from a more accurate small-signal equivalent circuit. The modeling results show a good agreement with the measured data. Based on the analysis of the noise coming from channel thermal noise and parasitic resistances, the noise contribution from each component is analyzed.

Original language	English
Title of host publication	Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
Pages	639-642
Number of pages	4
DOIs	https://doi.org/10.1109/RFIC.2007.380964
State	Published - 2007
Externally published	Yes
Event	2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007 - Honolulu, HI, United States Duration: 3 Jun 2007 → 5 Jun 2007

Publication series

Name	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)	1529-2517

Conference

Conference	2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
Country/Territory	United States
City	Honolulu, HI
Period	3/06/07 → 5/06/07

Keywords

Analytical modeling
Channel thermal noise
Induced gate noise
Noise parameters
RF MOSFET

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10.1109/RFIC.2007.380964

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Jeon, J., Song, I., Kang, I. M., Yun, Y., Park, B. G., Lee, J. D., & Shin, H. (2007). A new noise parameter model of short-channel MOSFETs. In Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007 (pp. 639-642). Article 4266512 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium). https://doi.org/10.1109/RFIC.2007.380964

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title = "A new noise parameter model of short-channel MOSFETs",

abstract = "In this paper, a closed form expression for noise parameters of MOSFETs are derived from a more accurate small-signal equivalent circuit. The modeling results show a good agreement with the measured data. Based on the analysis of the noise coming from channel thermal noise and parasitic resistances, the noise contribution from each component is analyzed.",

keywords = "Analytical modeling, Channel thermal noise, Induced gate noise, Noise parameters, RF MOSFET",

author = "Jongwook Jeon and Ickhyun Song and Kang, \{In Man\} and Yeonam Yun and Park, \{Byung Gook\} and Lee, \{Jong Duk\} and Hyungeheol Shin",

year = "2007",

doi = "10.1109/RFIC.2007.380964",

language = "English",

isbn = "1424405319",

series = "Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium",

pages = "639--642",

booktitle = "Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007",

note = "2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007 ; Conference date: 03-06-2007 Through 05-06-2007",

}

Jeon, J, Song, I, Kang, IM, Yun, Y, Park, BG, Lee, JD & Shin, H 2007, A new noise parameter model of short-channel MOSFETs. in Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007., 4266512, Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, pp. 639-642, 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007, Honolulu, HI, United States, 3/06/07. https://doi.org/10.1109/RFIC.2007.380964

A new noise parameter model of short-channel MOSFETs. / Jeon, Jongwook; Song, Ickhyun; Kang, In Man et al.
Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007. 2007. p. 639-642 4266512 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Song, Ickhyun

AU - Kang, In Man

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AU - Park, Byung Gook

AU - Lee, Jong Duk

AU - Shin, Hyungeheol

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AB - In this paper, a closed form expression for noise parameters of MOSFETs are derived from a more accurate small-signal equivalent circuit. The modeling results show a good agreement with the measured data. Based on the analysis of the noise coming from channel thermal noise and parasitic resistances, the noise contribution from each component is analyzed.

KW - Analytical modeling

KW - Channel thermal noise

KW - Induced gate noise

KW - Noise parameters

KW - RF MOSFET

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T2 - 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007

Y2 - 3 June 2007 through 5 June 2007

ER -

A new noise parameter model of short-channel MOSFETs

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Keywords

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