A new gradual hole injection dual-gate LIGBT

Byeong Hoon Lee; Jung Hoon Chun; Seong Dong Kim; Dae Seok Byeon; Won Oh Lee; Min Koo Han; Yeam Ik Choi

doi:10.1109/55.735756

A new gradual hole injection dual-gate LIGBT

Byeong Hoon Lee
, Jung Hoon Chun
, Seong Dong Kim
, Dae Seok Byeon
, Won Oh Lee
, Min Koo Han
, Yeam Ik Choi

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A new shorted-anode lateral insulated gate bipolar transistor (SA-LIGBT), entitled gradual hole injection dual gate LIGBT (GHI-LIGBT). is proposed and fabricated. The new device employs a dual gate and p⁺ injector in order to initiate the hole injection gradually from the anode electrode into the drift region so that the negative differential resistance (NDR) regime may be eliminated. The experimental results show that the NDR regime, which may cause undesirable device characteristics, is completely eliminated in the GHI-LIGBT, and the forward voltage drop is reduced by 1 V at the current density of 200 A/cm² in comparison with the conventional SA-LIGBT.

Original language	English
Pages (from-to)	490-492
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	19
Issue number	12
DOIs	https://doi.org/10.1109/55.735756
State	Published - Dec 1998
Externally published	Yes

Keywords

Gradual hole injection
Lateral insulated gate bipolar transistor (LIGBT)
Negative differential resistance (NDR)

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10.1109/55.735756

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title = "A new gradual hole injection dual-gate LIGBT",

abstract = "A new shorted-anode lateral insulated gate bipolar transistor (SA-LIGBT), entitled gradual hole injection dual gate LIGBT (GHI-LIGBT). is proposed and fabricated. The new device employs a dual gate and p+ injector in order to initiate the hole injection gradually from the anode electrode into the drift region so that the negative differential resistance (NDR) regime may be eliminated. The experimental results show that the NDR regime, which may cause undesirable device characteristics, is completely eliminated in the GHI-LIGBT, and the forward voltage drop is reduced by 1 V at the current density of 200 A/cm2 in comparison with the conventional SA-LIGBT.",

keywords = "Gradual hole injection, Lateral insulated gate bipolar transistor (LIGBT), Negative differential resistance (NDR)",

author = "Lee, \{Byeong Hoon\} and Chun, \{Jung Hoon\} and Kim, \{Seong Dong\} and Byeon, \{Dae Seok\} and Lee, \{Won Oh\} and Han, \{Min Koo\} and Choi, \{Yeam Ik\}",

year = "1998",

month = dec,

doi = "10.1109/55.735756",

language = "English",

volume = "19",

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TY - JOUR

T1 - A new gradual hole injection dual-gate LIGBT

AU - Lee, Byeong Hoon

AU - Chun, Jung Hoon

AU - Kim, Seong Dong

AU - Byeon, Dae Seok

AU - Lee, Won Oh

AU - Han, Min Koo

AU - Choi, Yeam Ik

PY - 1998/12

Y1 - 1998/12

N2 - A new shorted-anode lateral insulated gate bipolar transistor (SA-LIGBT), entitled gradual hole injection dual gate LIGBT (GHI-LIGBT). is proposed and fabricated. The new device employs a dual gate and p+ injector in order to initiate the hole injection gradually from the anode electrode into the drift region so that the negative differential resistance (NDR) regime may be eliminated. The experimental results show that the NDR regime, which may cause undesirable device characteristics, is completely eliminated in the GHI-LIGBT, and the forward voltage drop is reduced by 1 V at the current density of 200 A/cm2 in comparison with the conventional SA-LIGBT.

AB - A new shorted-anode lateral insulated gate bipolar transistor (SA-LIGBT), entitled gradual hole injection dual gate LIGBT (GHI-LIGBT). is proposed and fabricated. The new device employs a dual gate and p+ injector in order to initiate the hole injection gradually from the anode electrode into the drift region so that the negative differential resistance (NDR) regime may be eliminated. The experimental results show that the NDR regime, which may cause undesirable device characteristics, is completely eliminated in the GHI-LIGBT, and the forward voltage drop is reduced by 1 V at the current density of 200 A/cm2 in comparison with the conventional SA-LIGBT.

KW - Gradual hole injection

KW - Lateral insulated gate bipolar transistor (LIGBT)

KW - Negative differential resistance (NDR)

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VL - 19

SP - 490

EP - 492

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

A new gradual hole injection dual-gate LIGBT

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Keywords

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