TY - GEN
T1 - A new chemical mechanical planarization with the frozen chemical etchant as a polishing pad
AU - Kim, Yil Wook
AU - Yoo, Jae Ok
AU - Jung, Tae Woo
AU - Oh, Youn Jin
AU - Chung, Chan Hwa
N1 - Publisher Copyright:
© 2001 ISDRS-Univ of Maryland.
PY - 2001
Y1 - 2001
N2 - Chemical Mechanical Planarization (CMP), a new technology have developed at IBM since the early 1980's, has remain fruitful and applicable to the global planarization of multilevel metallization of logic devices and interconnection of memory devices. However, the conventional CMP process incurs several difficulties such as unstable slurries, scratches on the surface, various metal contaminants, dishing and erosion phenomena, cleaning residues, low selectivities, and additional high processing cost due to using consumable slurries and urethane polishing pads. In our study, we propose the new method of Frozen Chemical Planarization (FCP). We have substitute the frozen chemical etchant pad for conventional urethane polymer polishing pads, slurries, and abrasives. The acidic frozen chemical etchant pad is frozen by a dilute polysilicon etching solution with the heat of vaporization of liquid nitrogen (LN2). From our experiments, we have verified the suitability of our new CMP process using a frozen polishing etchant pad.
AB - Chemical Mechanical Planarization (CMP), a new technology have developed at IBM since the early 1980's, has remain fruitful and applicable to the global planarization of multilevel metallization of logic devices and interconnection of memory devices. However, the conventional CMP process incurs several difficulties such as unstable slurries, scratches on the surface, various metal contaminants, dishing and erosion phenomena, cleaning residues, low selectivities, and additional high processing cost due to using consumable slurries and urethane polishing pads. In our study, we propose the new method of Frozen Chemical Planarization (FCP). We have substitute the frozen chemical etchant pad for conventional urethane polymer polishing pads, slurries, and abrasives. The acidic frozen chemical etchant pad is frozen by a dilute polysilicon etching solution with the heat of vaporization of liquid nitrogen (LN2). From our experiments, we have verified the suitability of our new CMP process using a frozen polishing etchant pad.
UR - https://www.scopus.com/pages/publications/84961798822
U2 - 10.1109/ISDRS.2001.984431
DO - 10.1109/ISDRS.2001.984431
M3 - Conference contribution
AN - SCOPUS:84961798822
T3 - 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
SP - 31
EP - 33
BT - 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Semiconductor Device Research Symposium, ISDRS 2001
Y2 - 5 December 2001 through 7 December 2001
ER -