Abstract
Gas sensors are commercialized and widely applied in various fields. Existing commercial sensors, however, have limitations in terms of power consumption. In this work, we propose a new design guideline of the FET-type gas sensor platform to significantly improve the power efficiency of the embedded poly-Si micro-heater. The fabricated sensors are capable of low power operation while maintaining high response and stability. To our knowledge, the embedded micro-heater of the proposed platform provides the best power efficiency (e.g. 300 ℃ at 1.63 mW) among reported gas sensors with external heaters. By adopting electrode metals with low thermal conductivity (Ti/TiN instead of Cr) in contact with the heater and an efficient heat insulating air gap design (increasing air gap length under the electrode from 0 μm to 28 μm), we can increase the heater temperature by 63 % at the same power consumption. Also, the proposed platform is more sensitive and advantageous for low-concentration gas detection compared to the reported FET-type platform using hot chuck that increases the temperature of the entire sensor.
| Original language | English |
|---|---|
| Article number | 129642 |
| Journal | Sensors and Actuators, B: Chemical |
| Volume | 334 |
| DOIs | |
| State | Published - 1 May 2021 |
| Externally published | Yes |
Keywords
- Air gap
- FET-type gas sensor
- Indium oxide (InO) film
- Low power consumption
- Micro-heater
- NO gas
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