@inproceedings{fed904c3b0b14e4ca9239ba20f4d1fb4,
title = "A low leakage retention LDO and leakage-based BGR with 120nA quiescent current",
abstract = "This paper proposes a low leakage (LL) Low-Dropout (LDO) regulator. To reduce the power consumption and skip the requirement of BJT transistors a leakage-based Bandgap Reference (BGR) is applied in this structure. To reduce the current consumption, the devices in this structure are designed to operate in sub-threshold regions. The proposed LL LDO is verified in a 55-nm CMOS process with a 0.11-mm2 active area. The quiescent current of this structure is 120nA from a 3.3 V supply voltage.",
keywords = "Bandgap reference, Low dropout regulator, Low leakage, Quiescent current, Ultra-low power",
author = "Rikan, \{Behnam Samadpoor\} and Hamed Abbasizadeh and Nga, \{Truong Thi Kim\} and Kim, \{Sung Jin\} and Lee, \{Kang Yoon\}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 14th International SoC Design Conference, ISOCC 2017 ; Conference date: 05-11-2017 Through 08-11-2017",
year = "2018",
month = may,
day = "29",
doi = "10.1109/ISOCC.2017.8368851",
language = "English",
series = "Proceedings - International SoC Design Conference 2017, ISOCC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "200--201",
booktitle = "Proceedings - International SoC Design Conference 2017, ISOCC 2017",
}