A Low-Current and Analog Memristor with Ru as Mobile Species

Jung Ho Yoon; Jiaming Zhang; Peng Lin; Navnidhi Upadhyay; Peng Yan; Yuzi Liu; Qiangfei Xia; J. Joshua Yang

doi:10.1002/adma.201904599

A Low-Current and Analog Memristor with Ru as Mobile Species

Jung Ho Yoon, Jiaming Zhang, Peng Lin, Navnidhi Upadhyay, Peng Yan, Yuzi Liu, Qiangfei Xia, J. Joshua Yang

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

The switching parameters and device performance of memristors are predominately determined by their mobile species and matrix materials. Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great retention but also need a relatively high switching current (e.g., >30 µA), while devices with Ag or Cu as cation mobile species do not require a high switching current but usually show a poor retention. Here, Ru is studied as a new type of mobile species for memristors to achieve low switching current, fast speed, good reliability, scalability, and analog switching property simultaneously. An electrochemical metallization-like memristor with a stack of Pt/Ta₂O₅/Ru is developed. Migration of Ru ions is revealed by energy-dispersive X-ray spectroscopy mapping and in situ transmission electron microscopy within a sub-10 nm active device area before and after switching. The results open up a new avenue to engineer memristors for desired properties.

Original language	English
Article number	1904599
Journal	Advanced Materials
Volume	32
Issue number	9
DOIs	https://doi.org/10.1002/adma.201904599
State	Published - 1 Mar 2020
Externally published	Yes

Keywords

analog switching
electrochemical metallization
low current
memristors

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10.1002/adma.201904599

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title = "A Low-Current and Analog Memristor with Ru as Mobile Species",

abstract = "The switching parameters and device performance of memristors are predominately determined by their mobile species and matrix materials. Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great retention but also need a relatively high switching current (e.g., >30 µA), while devices with Ag or Cu as cation mobile species do not require a high switching current but usually show a poor retention. Here, Ru is studied as a new type of mobile species for memristors to achieve low switching current, fast speed, good reliability, scalability, and analog switching property simultaneously. An electrochemical metallization-like memristor with a stack of Pt/Ta2O5/Ru is developed. Migration of Ru ions is revealed by energy-dispersive X-ray spectroscopy mapping and in situ transmission electron microscopy within a sub-10 nm active device area before and after switching. The results open up a new avenue to engineer memristors for desired properties.",

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doi = "10.1002/adma.201904599",

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T1 - A Low-Current and Analog Memristor with Ru as Mobile Species

AU - Yoon, Jung Ho

AU - Zhang, Jiaming

AU - Lin, Peng

AU - Upadhyay, Navnidhi

AU - Yan, Peng

AU - Liu, Yuzi

AU - Xia, Qiangfei

AU - Yang, J. Joshua

PY - 2020/3/1

Y1 - 2020/3/1

N2 - The switching parameters and device performance of memristors are predominately determined by their mobile species and matrix materials. Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great retention but also need a relatively high switching current (e.g., >30 µA), while devices with Ag or Cu as cation mobile species do not require a high switching current but usually show a poor retention. Here, Ru is studied as a new type of mobile species for memristors to achieve low switching current, fast speed, good reliability, scalability, and analog switching property simultaneously. An electrochemical metallization-like memristor with a stack of Pt/Ta2O5/Ru is developed. Migration of Ru ions is revealed by energy-dispersive X-ray spectroscopy mapping and in situ transmission electron microscopy within a sub-10 nm active device area before and after switching. The results open up a new avenue to engineer memristors for desired properties.

AB - The switching parameters and device performance of memristors are predominately determined by their mobile species and matrix materials. Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great retention but also need a relatively high switching current (e.g., >30 µA), while devices with Ag or Cu as cation mobile species do not require a high switching current but usually show a poor retention. Here, Ru is studied as a new type of mobile species for memristors to achieve low switching current, fast speed, good reliability, scalability, and analog switching property simultaneously. An electrochemical metallization-like memristor with a stack of Pt/Ta2O5/Ru is developed. Migration of Ru ions is revealed by energy-dispersive X-ray spectroscopy mapping and in situ transmission electron microscopy within a sub-10 nm active device area before and after switching. The results open up a new avenue to engineer memristors for desired properties.

KW - analog switching

KW - electrochemical metallization

KW - low current

KW - memristors

UR - https://www.scopus.com/pages/publications/85078663304

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DO - 10.1002/adma.201904599

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SN - 0935-9648

VL - 32

JO - Advanced Materials

JF - Advanced Materials

IS - 9

M1 - 1904599

ER -

A Low-Current and Analog Memristor with Ru as Mobile Species

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Keywords

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