A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals

T. I. Shin; H. J. Lee; W. Y. Song; Sang Woo Kim; M. H. Park; C. W. Yang; D. H. Yoon

doi:10.1088/0957-4484/18/34/345305

A homojunction of single-crystalline β-Ga₂O₃ nanowires and nanocrystals

T. I. Shin
, H. J. Lee
, W. Y. Song
, Sang Woo Kim
, M. H. Park
, C. W. Yang
, D. H. Yoon

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A homojunction of single-crystalline β-Ga₂O₃ nanowires and nanocrystals was realized. Ga₂O₃ nanowires were synthesized at about 850-950°C using a mixture of Ga₂O ₃ and graphite powder with vapor phase epitaxy. It was found that the β-Ga₂O₃ nanocrystals form a single unit with the nanowires and are part of the same single crystal with a perfect lattice. Growth of β-Ga₂O₃ nanocrystals follows the growth direction of the main β-Ga₂O₃ nanowires. The distance between neighboring atoms in β-Ga₂O₃ nanowires was 0.522 nm, which is similar to the theoretical value for bulk β-Ga₂O ₃.

Original language	English
Article number	345305
Journal	Nanotechnology
Volume	18
Issue number	34
DOIs	https://doi.org/10.1088/0957-4484/18/34/345305
State	Published - 29 Aug 2007

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title = "A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals",

abstract = "A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals was realized. Ga2O3 nanowires were synthesized at about 850-950°C using a mixture of Ga2O 3 and graphite powder with vapor phase epitaxy. It was found that the β-Ga2O3 nanocrystals form a single unit with the nanowires and are part of the same single crystal with a perfect lattice. Growth of β-Ga2O3 nanocrystals follows the growth direction of the main β-Ga2O3 nanowires. The distance between neighboring atoms in β-Ga2O3 nanowires was 0.522 nm, which is similar to the theoretical value for bulk β-Ga2O 3.",

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T1 - A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals

AU - Shin, T. I.

AU - Lee, H. J.

AU - Song, W. Y.

AU - Kim, Sang Woo

AU - Park, M. H.

AU - Yang, C. W.

AU - Yoon, D. H.

PY - 2007/8/29

Y1 - 2007/8/29

N2 - A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals was realized. Ga2O3 nanowires were synthesized at about 850-950°C using a mixture of Ga2O 3 and graphite powder with vapor phase epitaxy. It was found that the β-Ga2O3 nanocrystals form a single unit with the nanowires and are part of the same single crystal with a perfect lattice. Growth of β-Ga2O3 nanocrystals follows the growth direction of the main β-Ga2O3 nanowires. The distance between neighboring atoms in β-Ga2O3 nanowires was 0.522 nm, which is similar to the theoretical value for bulk β-Ga2O 3.

AB - A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals was realized. Ga2O3 nanowires were synthesized at about 850-950°C using a mixture of Ga2O 3 and graphite powder with vapor phase epitaxy. It was found that the β-Ga2O3 nanocrystals form a single unit with the nanowires and are part of the same single crystal with a perfect lattice. Growth of β-Ga2O3 nanocrystals follows the growth direction of the main β-Ga2O3 nanowires. The distance between neighboring atoms in β-Ga2O3 nanowires was 0.522 nm, which is similar to the theoretical value for bulk β-Ga2O 3.

UR - https://www.scopus.com/pages/publications/34547784032

U2 - 10.1088/0957-4484/18/34/345305

DO - 10.1088/0957-4484/18/34/345305

M3 - Article

AN - SCOPUS:34547784032

SN - 0957-4484

VL - 18

JO - Nanotechnology

JF - Nanotechnology

IS - 34

M1 - 345305

ER -

A homojunction of single-crystalline β-Ga₂O₃ nanowires and nanocrystals

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