A High-Resolution Solid-State LiDAR Sensor With Reconfigurable Histogramming Time-to-Digital Converter and Filter for Depth Refinement

Wonjong Roh, Hyeongseok Seo, Canxing Piao, Minkyung Kim, Taehoon Jeon, Heesung Lee, Myung Jae Lee, Jung Hoon Chun, Seong Jin Kim, Jaehyuk Choi

Research output: Contribution to journalArticlepeer-review

Abstract

An area-efficient, high-resolution CMOS light detection and ranging (LiDAR) capable of generating 400 x 112 depth images is proposed. This sensor employs a rolling-scan architecture that is compatible with a row-addressable solid-state LiDAR system. To achieve high resolution, a single-photon avalanche diode (SPAD) analog front-end (AFE) circuit was implemented using only five nMOS transistors. A reconfigurable-resolution (RR) hTDC, capable of converting one-/two-channel signals with variable time resolutions of 1, 2, or 4 ns, is further proposed to implement a 400-channel histogramming time-to-digital converter (hTDC) with low memory overhead. The sensor leverages RR-hTDC to support two image resolution modes: macro and quadruple resolution (QR). In the macro mode, 200 x 56 depth images can be acquired with a 1-ns time resolution. In the QR mode, the sensor can achieve 400 x 112 high-resolution depth images with a 2-ns time resolution. In the range-enhanced (RE) mode, the time resolution is halved for distances beyond 100 m, enabling the detection range to be extended up to 200 m. A laser profile-based depth refining (DR) filter was used to compensate for the reduction in time resolution and ensure sub-centimeter time resolution, improving depth precision by 40% compared with the conventional QR mode. The prototype LiDAR sensor was fabricated as a 90-nm CMOS image sensor (CIS) process. In outdoor conditions under 135-klx sunlight, the worst case depth precision and accuracy for distances of 15–60 m were measured as 10 and 17 cm, respectively. Moreover, a relative precision of less than 0.18% was achieved over a 60–130-m range under 90-klx sunlight. The total power consumption of the sensor was measured to be 572 mW when operating at 20 frames/s under 70-klx sunlight.

Original languageEnglish
Pages (from-to)3665-3681
Number of pages17
JournalIEEE Journal of Solid-State Circuits
Volume60
Issue number10
DOIs
StatePublished - 2025

Keywords

  • CMOS depth sensor
  • depth refining filter (DRF)
  • direct time of flight (dToF)
  • high-resolution LiDAR
  • histogramming time-to-digital converter (hTDC)
  • light detection and ranging (LiDAR)
  • reconfigurable-resolution hTDC (RR-hTDC)
  • single-photon avalanche diode (SPAD)
  • SPAD analog front end (AFE)

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